As the field of superconducting quantum computing approaches maturity, optimization of single-device performance is proving to be a promising avenue towards large-scale quantum computers.However, this optimization is possible only if performance metrics can be accurately compared among measurements, devices, and laboratories. Currently such comparisons are inaccurate or impossible due to understudied errors from a plethora of sources. In this Perspective, we outline the current state of error analysis for qubits and resonators in superconducting quantum circuits, and discuss what future investigations are required before superconducting quantum device optimization can be realized.
Scalable quantum computing can become a reality with error correction, provided coherent qubits can be constructed in large arrays. The key premise is that physical errors can remainboth small and sufficiently uncorrelated as devices scale, so that logical error rates can be exponentially suppressed. However, energetic impacts from cosmic rays and latent radioactivity violate both of these assumptions. An impinging particle ionizes the substrate, radiating high energy phonons that induce a burst of quasiparticles, destroying qubit coherence throughout the device. High-energy radiation has been identified as a source of error in pilot superconducting quantum devices, but lacking a measurement technique able to resolve a single event in detail, the effect on large scale algorithms and error correction in particular remains an open question. Elucidating the physics involved requires operating large numbers of qubits at the same rapid timescales as in error correction, exposing the event’s evolution in time and spread in space. Here, we directly observe high-energy rays impacting a large-scale quantum processor. We introduce a rapid space and time-multiplexed measurement method and identify large bursts of quasiparticles that simultaneously and severely limit the energy coherence of all qubits, causing chip-wide failure. We track the events from their initial localised impact to high error rates across the chip. Our results provide direct insights into the scale and dynamics of these damaging error bursts in large-scale devices, and highlight the necessity of mitigation to enable quantum computing to scale.
The performance of superconducting circuits for quantum computing is limited by materials losses. In particular, coherence times are typically bounded by two-level system (TLS) lossesat single photon powers and millikelvin temperatures. The identification of low loss fabrication techniques, materials, and thin film dielectrics is critical to achieving scalable architectures for superconducting quantum computing. Superconducting microwave resonators provide a convenient qubit proxy for assessing performance and studying TLS loss and other mechanisms relevant to superconducting circuits such as non-equilibrium quasiparticles and magnetic flux vortices. In this review article, we provide an overview of considerations for designing accurate resonator experiments to characterize loss, including applicable types of loss, cryogenic setup, device design, and methods for extracting material and interface losses, summarizing techniques that have been evolving for over two decades. Results from measurements of a wide variety of materials and processes are also summarized. Lastly, we present recommendations for the reporting of loss data from superconducting microwave resonators to facilitate materials comparisons across the field.
Two-level-system (TLS) defects in amorphous dielectrics are a major source of noise and decoherence in solid-state qubits. Gate-dependent non-Markovian errors caused by TLS-qubit couplingare detrimental to fault-tolerant quantum computation and have not been rigorously treated in the existing literature. In this work, we derive the non-Markovian dynamics between TLS and qubits during a SWAP-like two-qubit gate and the associated average gate fidelity for frequency-tunable Transmon qubits. This gate dependent error model facilitates using qubits as sensors to simultaneously learn practical imperfections in both the qubit’s environment and control waveforms. We combine the-state-of-art machine learning algorithm with Moiré-enhanced swap spectroscopy to achieve robust learning using noisy experimental data. Deep neural networks are used to represent the functional map from experimental data to TLS parameters and are trained through an evolutionary algorithm. Our method achieves the highest learning efficiency and robustness against experimental imperfections to-date, representing an important step towards in-situ quantum control optimization over environmental and control defects.
Future quantum computing systems will require cryogenic integrated circuits to control and measure millions of qubits. In this paper, we report the design and characterization of aprototype cryogenic CMOS integrated circuit that has been optimized for the control of transmon qubits. The circuit has been integrated into a quantum measurement setup and its performance has been validated through multiple quantum control experiments.
We present a lumped-element Josephson parametric amplifier designed to operate with strong coupling to the environment. In this regime, we observe broadband frequency dependent amplificationwith multi-peaked gain profiles. We account for this behaviour using the „pumpistor“ model which allows for frequency dependent variation of the external impedance. Using this understanding, we demonstrate control over gain profiles through changes in the environment impedance at a given frequency. With strong coupling to a suitable external impedance we observe a significant increase in dynamic range, and large amplification bandwidth up to 700 MHz giving near quantum-limited performance.
We demonstrate a lumped-element Josephson Parametric Amplifier (LJPA), using a single-ended design that includes an on-chip, high-bandwidth flux bias line. The amplifier can be pumpedinto its region of parametric gain through either the input port or through the flux bias line. Broadband amplification is achieved at a tunable frequency $\omega/2 \pi$ between 5 to 7 GHz with quantum-limited noise performance, a gain-bandwidth product greater than 500 MHz, and an input saturation power in excess of -120 dBm. The bias line allows fast frequency tuning of the amplifier, with variations of hundreds of MHz over time scales shorter than 10 ns.
We present a systematic study of the properties of TiN films by varying the deposition conditions in an ultra-high-vacuum reactive magnetron sputtering chamber. By increasing the depositionpressure from 2 to 9 mTorr while keeping a nearly stoichiometric composition of Ti(1-x)N(x) (x=0.5), the film resistivity increases, the dominant crystal orientation changes from (100) to (111), grain boundaries become clearer, and the strong compressive strain changes to weak tensile strain. The TiN films absorb a high concentration of contaminants including hydrogen, carbon, and oxygen when they are exposed to air after deposition. With the target-substrate distance set to 88 mm the contaminant levels increase from ~0.1% to ~10% as the pressure is increased from 2 to 9 mTorr. The contaminant concentrations also correlate with in-plane distance from the center of the substrate and increase by roughly two orders of magnitude as the target-substrate distance is increased from 88 mm to 266 mm. These contaminants are found to strongly influence the properties of TiN films. For instance, the resistivity of stoichiometric films increases by around a factor of 5 as the oxygen content increases from 0.1% to 11%. These results suggest that the sputtered TiN particle energy is critical in determining the TiN film properties, and that it is important to control this energy to obtain high-quality TiN films. Superconducting coplanar waveguide resonators made from a series of nearly stoichiometric films grown at pressures from 2 mTorr to 7 mTorr show an increase in intrinsic quality factor from ~10^4 to ~10^6 as the magnitude of the compressive strain decreases from nearly 3800 MPa to approximately 150 MPa and the oxygen content increases from 0.1% to 8%. The films with a higher oxygen content exhibit lower loss, but the nonuniformity of the oxygen incorporation hinders the use of sputtered TiN in larger circuits.