We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventionaltest equipment to apply an alternating bias to a heated tunnel barrier, giant increases in the room temperature resistance, greater than 70%, can be achieved. The rate of resistance change is shown to be strongly temperature-dependent, and is independent of junction size in the sub-micron regime. In order to measure their tunneling properties at mK temperatures, we characterized transmon qubit junctions treated with this alternating-bias assisted annealing (ABAA) technique. The measured frequencies follow the Ambegaokar-Baratoff relation between the shifted resistance and critical current. Further, these studies show a reduction of junction-contributed loss on the order of ≈2×10−6, along with a significant reduction in resonant- and off-resonant-two level system defects when compared to untreated samples. Imaging with high-resolution TEM shows that the barrier is still predominantly amorphous with a more uniform distribution of aluminum coordination across the barrier relative to untreated junctions. This new approach is expected to be widely applicable to a broad range of devices that rely on amorphous aluminum oxide, as well as the many other metal-insulator-metal structures used in modern electronics.
We use a floating tunable coupler to mediate interactions between qubits on separate chips to build a modular architecture. We demonstrate three different designs of multi-chip tunablecouplers using vacuum gap capacitors or superconducting indium bump bonds to connect the coupler to a microwave line on a common substrate and then connect to the qubit on the next chip. We show that the zero-coupling condition between qubits on separate chips can be achieved in each design and that the relaxation rates for the coupler and qubits are not noticeably affected by the extra circuit elements. Finally, we demonstrate two-qubit gate operations with fidelity at the same level as qubits with a tunable coupler on a single chip. Using one or more indium bonds does not degrade qubit coherence or impact the performance of two-qubit gates.
Continued advances in superconducting qubit performance require more detailed understandings of the many sources of decoherence. Within these devices, two-level systems arise due todefects, interfaces, and grain boundaries, and are thought to be a major source of qubit decoherence at millikelvin temperatures. In addition to Al, Nb is a commonly used metalization layer for superconducting qubits. Consequently, a significant effort is required to develop and qualify processes that mitigate defects in Nb films. As the fabrication of complete superconducting qubits and their characterization at millikelvin temperatures is a time and resource intensive process, it is desirable to have measurement tools that can rapidly characterize the properties of films and evaluate different treatments. Here we show that measurements of the variation of the superconducting critical temperature Tc with an applied external magnetic field H (of the phase boundary Tc−H) performed with very high resolution show features that are directly correlated with the structure of the Nb films. In combination with x-ray diffraction measurements, we show that one can even distinguish variations quality and crystal orientation of the grains in a Nb film by small but reproducible changes in the measured superconducting phase boundary.
As the field of quantum computing progresses to larger-scale devices, multiplexing will be crucial to scale quantum processors. While multiplexed readout is common practice for superconductingdevices, relatively little work has been reported about the combination of flux and microwave control lines. Here, we present a method to integrate a microwave line and a flux line into a single „XYZ line“. This combined control line allows us to perform fast single-qubit gates as well as to deliver flux signals to the qubits. The measured relaxation times of the qubits are comparable to state-of-art devices employing separate control lines. We benchmark the fidelity of single-qubit gates with randomized benchmarking, achieving a fidelity above 99.5%, and we demonstrate that XYZ lines can in principle be used to run parametric entangling gates.