We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventionaltest equipment to apply an alternating bias to a heated tunnel barrier, giant increases in the room temperature resistance, greater than 70%, can be achieved. The rate of resistance change is shown to be strongly temperature-dependent, and is independent of junction size in the sub-micron regime. In order to measure their tunneling properties at mK temperatures, we characterized transmon qubit junctions treated with this alternating-bias assisted annealing (ABAA) technique. The measured frequencies follow the Ambegaokar-Baratoff relation between the shifted resistance and critical current. Further, these studies show a reduction of junction-contributed loss on the order of ≈2×10−6, along with a significant reduction in resonant- and off-resonant-two level system defects when compared to untreated samples. Imaging with high-resolution TEM shows that the barrier is still predominantly amorphous with a more uniform distribution of aluminum coordination across the barrier relative to untreated junctions. This new approach is expected to be widely applicable to a broad range of devices that rely on amorphous aluminum oxide, as well as the many other metal-insulator-metal structures used in modern electronics.
We present a novel transmon qubit fabrication technique that yields systematic improvements in T1 coherence times. We fabricate devices using an encapsulation strategy that involvespassivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different capping materials and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T1 coherence times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 200 microseconds. Our comparative structural and chemical analysis suggests that amorphous niobium suboxides may induce higher losses. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.
The speed of elementary quantum gates, particularly two-qubit entangling gates, ultimately sets the limit on the speed at which quantum circuits can operate. In this work, we demonstrateexperimentally two-qubit entangling gates at nearly the fastest possible speed allowed by the physical interaction strength between two superconducting transmon qubits. We achieve this quantum speed limit by implementing experimental gates designed using a machine learning inspired optimal control method. Importantly, our method only requires the single-qubit drive strength to be moderately larger than the interaction strength to achieve an arbitrary entangling gate close to its analytical speed limit with high fidelity. Thus, the method is applicable to a variety of platforms including those with comparable single-qubit and two-qubit gate speeds, or those with always-on interactions.
Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despiterecent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of μs, material quality and interfacial structures continue to curb device performance. When niobium is deployed as the superconducting material, two-level system defects in the thin film and adjacent dielectric regions introduce stochastic noise and dissipate electromagnetic energy at the cryogenic operating temperatures. In this study, we utilize time-of-flight secondary ion mass spectrometry (TOF-SIMS) to understand the role specific fabrication procedures play in introducing such dissipation mechanisms in these complex systems. We interrogated Nb thin films and transmon qubit structures fabricated by Rigetti Computing and at the National Institute of Standards and Technology through slight variations in the processing and vacuum conditions. We find that when Nb film is sputtered onto the Si substrate, oxide and silicide regions are generated at various interfaces. We also observe that impurity species such as niobium hydrides and carbides are incorporated within the niobium layer during the subsequent lithographic patterning steps. The formation of these resistive compounds likely impact the superconducting properties of the Nb thin film. Additionally, we observe the presence of halogen species distributed throughout the patterned thin films. We conclude by hypothesizing the source of such impurities in these structures in an effort to intelligently fabricate superconducting qubits and extend coherence times moving forward.
A merged-element transmon (MET) device, based on Si fins, is proposed and the steps to form such a „FinMET“ are demonstrated. This new application of fin technology capitalizeson the anisotropic etch of Si(111) relative to Si(110) to define atomically flat, high aspect ratio Si tunnel barriers with epitaxial superconductor contacts on the parallel side-wall surfaces. This process circumvents the challenges associated with the growth of low-loss insulating barriers on lattice matched superconductors. By implementing low-loss, intrinsic float-zone Si as the barrier material rather than commonly used, lossy Al2O3, the FinMET is expected to overcome problems with standard transmons by (1) reducing dielectric losses; (2) minimizing the formation of two-level system spectral features; (3) exhibiting greater control over barrier thickness and qubit frequency spread, especially when combined with commercial fin fabrication and atomic-layer digital etching; (4) reducing the footprint by four orders of magnitude; and (5) allowing scalable fabrication. Here, fabrication of Si fins on Si(110) substrates with shadow-deposited Al electrodes is demonstrated. The formation of FinMET devices is expected to allow tunnel junction patterning with optical lithography. This facilitates uniform fabrication on Si wafers based on existing infrastructure for fin-based devices while simultaneously avoiding lossy amorphous dielectrics for tunnel barriers.
As the field of superconducting quantum computing approaches maturity, optimization of single-device performance is proving to be a promising avenue towards large-scale quantum computers.However, this optimization is possible only if performance metrics can be accurately compared among measurements, devices, and laboratories. Currently such comparisons are inaccurate or impossible due to understudied errors from a plethora of sources. In this Perspective, we outline the current state of error analysis for qubits and resonators in superconducting quantum circuits, and discuss what future investigations are required before superconducting quantum device optimization can be realized.
Due to their unique properties as lossless, nonlinear circuit elements, Josephson junctions lie at the heart of superconducting quantum information processing. Previously, we demonstrateda two-layer, submicrometer-scale overlap junction fabrication process suitable for qubits with long coherence times. Here, we extend the overlap junction fabrication process to micrometer-scale junctions. This allows us to fabricate other superconducting quantum devices. For example, we demonstrate an overlap-junction-based Josephson parametric amplifier that uses only 2 layers. This efficient fabrication process yields frequency-tunable devices with negligible insertion loss and a gain of ~ 30 dB. Compared to other processes, the overlap junction allows for fabrication with minimal infrastructure, high yield, and state-of-the-art device performance.
Experiments with superconducting circuits require careful calibration of the applied pulses and fields over a large frequency range. This remains an ongoing challenge as commercialsemiconductor electronics are not able to probe signals arriving at the chip due to its cryogenic environment. Here, we demonstrate how the on-chip amplitude and frequency of a microwave field can be inferred from the ac Stark shifts of higher transmon levels. In our time-resolved measurements, we employ a simple quantum sensing protocol, i.e. Ramsey fringes, allowing us to detect the amplitude of the systems transfer function over a range of several hundreds of MHz with an energy sensitivity on the order of 10−4. Combined with similar measurements for the phase of the transfer function, our sensing method can facilitate the microwave calibration of high fidelity quantum gates necessary for working with superconducting quantum circuits. Additionally, the potential to characterize arbitrary microwave fields promotes applications in related areas of research, such as quantum optics or hybrid microwave systems including photonic, mechanical or magnonic subsystems.
We report on long-term measurements of a highly coherent, non-tunable transmon qubit, revealing low-frequency burst noise in coherence times and transition frequency. We achieve thisthrough a simultaneous measurement of the qubits relaxation and dephasing rate as well as its resonance frequency and an analysis of their correlations. These yield information about the microscopic origin of the intrinsic decoherence mechanisms in Josephson qubits. Our data is consistent with a small number of microscopic two-level systems located at the edges of the superconducting film, which is further confirmed by a spectral noise analysis.
Nonreciprocal microwave devices play several critical roles in high-fidelity, quantum-nondemolition (QND) measurement schemes. They separate input from output, impose unidirectionalrouting of readout signals, and protect the quantum systems from unwanted noise originated by the output chain. However, state-of-the-art, cryogenic circulators and isolators are disadvantageous in scalable superconducting quantum processors because they use magnetic materials and strong magnetic fields. Here, we realize an active isolator formed by coupling two nondegenerate Josephson mixers in an interferometric scheme. Nonreciprocity is generated by applying a phase gradient between the same-frequency pumps feeding the Josephson mixers, which play the role of the magnetic field in a Faraday medium. To demonstrate the applicability of this Josephson-based isolator for quantum measurements, we incorporate it into the output line of a superconducting qubit, coupled to a fast resonator and a Purcell filter. We also utilize a wideband, superconducting directional coupler for coupling the readout signals into and out of the qubit-resonator system and a quantum-limited Josephson amplifier for boosting the readout fidelity. By using this novel quantum setup, we demonstrate fast, high-fidelity, QND measurements of the qubit while providing more than 20 dB of protection against amplified noise reflected off the Josephson amplifier.