Engineering high-fidelity two-qubit gates is an indispensable step toward practical quantum computing. For superconducting quantum platforms, one important setback is the stray interactionbetween qubits, which causes significant coherent errors. For transmon qubits, protocols for mitigating such errors usually involve fine-tuning the hardware parameters or introducing usually noisy flux-tunable couplers. In this work, we propose a simple scheme to cancel these stray interactions. The coupler used for such cancellation is a driven high-coherence resonator, where the amplitude and frequency of the drive serve as control knobs. Through the resonator-induced-phase (RIP) interaction, the static ZZ coupling can be entirely neutralized. We numerically show that such a scheme can enable short and high-fidelity entangling gates, including cross-resonance CNOT gates within 40 ns and adiabatic CZ gates within 140 ns. Our architecture is not only ZZ free but also contains no extra noisy components, such that it preserves the coherence times of fixed-frequency transmon qubits. With the state-of-the-art coherence times, the error of our cross-resonance CNOT gate can be reduced to below 1e-4.
We present a novel transmon qubit fabrication technique that yields systematic improvements in T1 coherence times. We fabricate devices using an encapsulation strategy that involvespassivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different capping materials and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T1 coherence times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 200 microseconds. Our comparative structural and chemical analysis suggests that amorphous niobium suboxides may induce higher losses. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.
The coherence times of many widely used superconducting qubits are limited by material defects that can be modeled as an ensemble of two-level systems (TLSs). Among them, charge fluctuatorsinside amorphous oxide layers are believed to contribute to both low-frequency 1/f charge noise and high-frequency dielectric loss, causing fast qubit dephasing and relaxation. Here, we propose to mitigate those noise channels by engineering the relevant TLS noise spectral densities. Specifically, our protocols smooth the high-frequency noise spectrum and suppress the low-frequency noise amplitude via relaxing and dephasing the TLSs, respectively. As a result, we predict a drastic stabilization in qubit lifetime and an increase in qubit pure dephasing time. Our detailed analysis of feasible experimental implementations shows that the improvement is not compromised by spurious coupling from the applied noise to the qubit.
Superconducting thin films of niobium have been extensively employed in transmon qubit architectures. Although these architectures have demonstrated remarkable improvements in recentyears, further improvements in performance through materials engineering will aid in large-scale deployment. Here, we use information retrieved from electron microscopy and analysis to conduct a detailed assessment of potential decoherence sources in transmon qubit test devices. In the niobium thin film, we observe the presence of localized strain at interfaces, which may amplify interactions between two-level systems and impose limits on T1 and T2 relaxation times. Additionally, we observe the presence of a surface oxide with varying stoichiometry and bond distances, which can generate a broad two-level system noise spectrum. Finally, a similarly disordered and rough interface is observed between Nb and the Si substrate. We propose that this interface can also degrade the overall superconducting properties.
Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despiterecent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of μs, material quality and interfacial structures continue to curb device performance. When niobium is deployed as the superconducting material, two-level system defects in the thin film and adjacent dielectric regions introduce stochastic noise and dissipate electromagnetic energy at the cryogenic operating temperatures. In this study, we utilize time-of-flight secondary ion mass spectrometry (TOF-SIMS) to understand the role specific fabrication procedures play in introducing such dissipation mechanisms in these complex systems. We interrogated Nb thin films and transmon qubit structures fabricated by Rigetti Computing and at the National Institute of Standards and Technology through slight variations in the processing and vacuum conditions. We find that when Nb film is sputtered onto the Si substrate, oxide and silicide regions are generated at various interfaces. We also observe that impurity species such as niobium hydrides and carbides are incorporated within the niobium layer during the subsequent lithographic patterning steps. The formation of these resistive compounds likely impact the superconducting properties of the Nb thin film. Additionally, we observe the presence of halogen species distributed throughout the patterned thin films. We conclude by hypothesizing the source of such impurities in these structures in an effort to intelligently fabricate superconducting qubits and extend coherence times moving forward.
We discuss a potentially dramatic source of quantum decoherence in three-dimensional niobium superconducting resonators and in two-dimensional transmon qubits that utilize oxidizedniobium: an aggravation of two-level system (TLS) induced losses driven by vacuum baking at temperatures and durations typically used in transmon qubit fabrication. By coupling RF measurements on cavities with time-of-flight secondary ion mass spectrometry studies on an SRF cavity cutout, we find that modest vacuum baking (150-200~∘C for 5~min-11~hrs) produces a partially depleted native niobium oxide which likely contains a large concentration of oxygen vacancies that drive TLS losses. Continued baking is found to eliminate this depleted layer and mediate these additional losses.
We report the first evidence of the formation of niobium hydrides within niobium films on silicon substrates in superconducting qubits fabricated at Rigetti Computing. We combine complementarytechniques including room and cryogenic temperature atomic scale high-resolution and scanning transmission electron microscopy (HR-TEM and STEM), atomic force microscopy (AFM), and the time-of-flight secondary ion mass spectroscopy (TOF-SIMS) to reveal the existence of the niobium hydride precipitates directly in the Rigetti chip areas. Electron diffraction and high-resolution transmission electron microscopy (HR-TEM) analyses are performed at room and cryogenic temperatures (~106 K) on superconducting qubit niobium film areas, and reveal the formation of three types of Nb hydride domains with different crystalline orientations and atomic structures. There is also variation in their size and morphology from small (~5 nm) irregular shape domains within the Nb grains to large (~10-100 nm) Nb grains fully converted to niobium hydride. As niobium hydrides are non-superconducting and can easily change in size and location upon different cooldowns to cryogenic temperatures, our findings highlight a new previously unknown source of decoherence in superconducting qubits, contributing to both quasiparticle and two-level system (TLS) losses, and offering a potential explanation for qubit performance changes upon cooldowns. A pathway to mitigate the formation of the Nb hydrides for superconducting qubit applications is also discussed.
Due to their unique properties as lossless, nonlinear circuit elements, Josephson junctions lie at the heart of superconducting quantum information processing. Previously, we demonstrateda two-layer, submicrometer-scale overlap junction fabrication process suitable for qubits with long coherence times. Here, we extend the overlap junction fabrication process to micrometer-scale junctions. This allows us to fabricate other superconducting quantum devices. For example, we demonstrate an overlap-junction-based Josephson parametric amplifier that uses only 2 layers. This efficient fabrication process yields frequency-tunable devices with negligible insertion loss and a gain of ~ 30 dB. Compared to other processes, the overlap junction allows for fabrication with minimal infrastructure, high yield, and state-of-the-art device performance.