We present a novel transmon qubit fabrication technique that yields systematic improvements in T1 coherence times. We fabricate devices using an encapsulation strategy that involvespassivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different capping materials and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T1 coherence times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 200 microseconds. Our comparative structural and chemical analysis suggests that amorphous niobium suboxides may induce higher losses. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.
The speed of elementary quantum gates, particularly two-qubit entangling gates, ultimately sets the limit on the speed at which quantum circuits can operate. In this work, we demonstrateexperimentally two-qubit entangling gates at nearly the fastest possible speed allowed by the physical interaction strength between two superconducting transmon qubits. We achieve this quantum speed limit by implementing experimental gates designed using a machine learning inspired optimal control method. Importantly, our method only requires the single-qubit drive strength to be moderately larger than the interaction strength to achieve an arbitrary entangling gate close to its analytical speed limit with high fidelity. Thus, the method is applicable to a variety of platforms including those with comparable single-qubit and two-qubit gate speeds, or those with always-on interactions.
Due to their unique properties as lossless, nonlinear circuit elements, Josephson junctions lie at the heart of superconducting quantum information processing. Previously, we demonstrateda two-layer, submicrometer-scale overlap junction fabrication process suitable for qubits with long coherence times. Here, we extend the overlap junction fabrication process to micrometer-scale junctions. This allows us to fabricate other superconducting quantum devices. For example, we demonstrate an overlap-junction-based Josephson parametric amplifier that uses only 2 layers. This efficient fabrication process yields frequency-tunable devices with negligible insertion loss and a gain of ~ 30 dB. Compared to other processes, the overlap junction allows for fabrication with minimal infrastructure, high yield, and state-of-the-art device performance.
We describe a kinetic inductance traveling-wave (KIT) amplifier suitable for superconducting quantum information measurements and characterize its wideband scattering and noise properties.We use mechanical microwave switches to calibrate the four amplifier scattering parameters up to the device input and output connectors at the dilution refrigerator base temperature and a tunable temperature load to characterize the amplifier noise. Finally, we demonstrate the high fidelity simultaneous dispersive readout of two superconducting transmon qubits. The KIT amplifier provides low-noise amplification of both readout tones with readout fidelities in excess of 89% and negligible effect on qubit lifetime and coherence.