Evolution of 1/f Flux Noise in Superconducting Qubits with Weak Magnetic Fields

  1. David A. Rower,
  2. Lamia Ateshian,
  3. Lauren H. Li,
  4. Max Hays,
  5. Dolev Bluvstein,
  6. Leon Ding,
  7. Bharath Kannan,
  8. Aziza Almanakly,
  9. Jochen Braumüller,
  10. David K. Kim,
  11. Alexander Melville,
  12. Bethany M. Niedzielski,
  13. Mollie E. Schwartz,
  14. Jonilyn L. Yoder,
  15. Terry P. Orlando,
  16. Joel I-Jan Wang,
  17. Simon Gustavsson,
  18. Jeffrey A. Grover,
  19. Kyle Serniak,
  20. Riccardo Comin,
  21. and William D. Oliver
The microscopic origin of 1/f magnetic flux noise in superconducting circuits has remained an open question for several decades despite extensive experimental and theoretical investigation.
Recent progress in superconducting devices for quantum information has highlighted the need to mitigate sources of qubit decoherence, driving a renewed interest in understanding the underlying noise mechanism(s). Though a consensus has emerged attributing flux noise to surface spins, their identity and interaction mechanisms remain unclear, prompting further study. Here we apply weak in-plane magnetic fields to a capacitively-shunted flux qubit (where the Zeeman splitting of surface spins lies below the device temperature) and study the flux-noise-limited qubit dephasing, revealing previously unexplored trends that may shed light on the dynamics behind the emergent 1/f noise. Notably, we observe an enhancement (suppression) of the spin-echo (Ramsey) pure dephasing time in fields up to B=100 G. With direct noise spectroscopy, we further observe a transition from a 1/f to approximately Lorentzian frequency dependence below 10 Hz and a reduction of the noise above 1 MHz with increasing magnetic field. We suggest that these trends are qualitatively consistent with an increase of spin cluster sizes with magnetic field. These results should help to inform a complete microscopic theory of 1/f flux noise in superconducting circuits.

Demonstration of tunable three-body interactions between superconducting qubits

  1. Tim Menke,
  2. William P. Banner,
  3. Thomas R. Bergamaschi,
  4. Agustin Di Paolo,
  5. Antti Vepsäläinen,
  6. Steven J. Weber,
  7. Roni Winik,
  8. Alexander Melville,
  9. Bethany M. Niedzielski,
  10. Danna Rosenberg,
  11. Kyle Serniak,
  12. Mollie E. Schwartz,
  13. Jonilyn L. Yoder,
  14. Alán Aspuru-Guzik,
  15. Simon Gustavsson,
  16. Jeffrey A. Grover,
  17. Cyrus F. Hirjibehedin,
  18. Andrew J. Kerman,
  19. and William D. Oliver
Nonpairwise multi-qubit interactions present a useful resource for quantum information processors. Their implementation would facilitate more efficient quantum simulations of molecules
and combinatorial optimization problems, and they could simplify error suppression and error correction schemes. Here we present a superconducting circuit architecture in which a coupling module mediates 2-local and 3-local interactions between three flux qubits by design. The system Hamiltonian is estimated via multi-qubit pulse sequences that implement Ramsey-type interferometry between all neighboring excitation manifolds in the system. The 3-local interaction is coherently tunable over several MHz via the coupler flux biases and can be turned off, which is important for applications in quantum annealing, analog quantum simulation, and gate-model quantum computation.

Extensible circuit-QED architecture via amplitude- and frequency-variable microwaves

  1. Agustin Di Paolo,
  2. Catherine Leroux,
  3. Thomas M. Hazard,
  4. Kyle Serniak,
  5. Simon Gustavsson,
  6. Alexandre Blais,
  7. and William D. Oliver
We introduce a circuit-QED architecture combining fixed-frequency qubits and microwave-driven couplers. In the appropriate frame, the drive parameters appear as tunable knobs enabling
selective two-qubit coupling and coherent-error suppression. We moreover introduce a set of controlled-phase gates based on drive-amplitude and drive-frequency modulation. We develop a theoretical framework based on Floquet theory to model microwave-activated interactions with time-dependent drive parameters, which we also use for pulse shaping. We perform numerical simulations of the gate fidelity for realistic circuit parameters, and discuss the impact of drive-induced decoherence. We estimate average gate fidelities beyond 99.9% for all-microwave controlled-phase operations with gate times in the range 50−120ns. These two-qubit gates can operate over a large drive-frequency bandwidth and in a broad range of circuit parameters, thereby improving extensibility. We address the frequency allocation problem for this architecture using perturbation theory, demonstrating that qubit, coupler and drive frequencies can be chosen such that undesired static and driven interactions remain bounded in a multi-qubit device. Our numerical methods are useful for describing the time-evolution of driven systems in the adiabatic limit, and are applicable to a wide variety of circuit-QED setups.

Distinguishing parity-switching mechanisms in a superconducting qubit

  1. Spencer Diamond,
  2. Valla Fatemi,
  3. Max Hays,
  4. Heekun Nho,
  5. Pavel D. Kurilovich,
  6. Thomas Connolly,
  7. Vidul R. Joshi,
  8. Kyle Serniak,
  9. Luigi Frunzio,
  10. Leonid I. Glazman,
  11. and Michel H. Devoret
Single-charge tunneling is a decoherence mechanism affecting superconducting qubits, yet the origin of excess quasiparticle excitations (QPs) responsible for this tunneling in superconducting
devices is not fully understood. We measure the flux dependence of charge-parity (or simply, „parity“) switching in an offset-charge-sensitive transmon qubit to identify the contributions of photon-assisted parity switching and QP generation to the overall parity-switching rate. The parity-switching rate exhibits a qubit-state-dependent peak in the flux dependence, indicating a cold distribution of excess QPs which are predominantly trapped in the low-gap film of the device. Moreover, we find that the photon-assisted process contributes significantly to both parity switching and the generation of excess QPs by fitting to a model that self-consistently incorporates photon-assisted parity switching as well as inter-film QP dynamics.

On-Demand Directional Photon Emission using Waveguide Quantum Electrodynamics

  1. Bharath Kannan,
  2. Aziza Almanakly,
  3. Youngkyu Sung,
  4. Agustin Di Paolo,
  5. David A. Rower,
  6. Jochen Braumüller,
  7. Alexander Melville,
  8. Bethany M. Niedzielski,
  9. Amir Karamlou,
  10. Kyle Serniak,
  11. Antti Vepsäläinen,
  12. Mollie E. Schwartz,
  13. Jonilyn L. Yoder,
  14. Roni Winik,
  15. Joel I-Jan Wang,
  16. Terry P. Orlando,
  17. Simon Gustavsson,
  18. Jeffrey A. Grover,
  19. and William D. Oliver
Routing quantum information between non-local computational nodes is a foundation for extensible networks of quantum processors. Quantum information can be transferred between arbitrary
nodes by photons that propagate between them, or by resonantly coupling nearby nodes. Notably, conventional approaches involving propagating photons have limited fidelity due to photon loss and are often unidirectional, whereas architectures that use direct resonant coupling are bidirectional in principle, but can generally accommodate only a few local nodes. Here, we demonstrate high-fidelity, on-demand, bidirectional photon emission using an artificial molecule comprising two superconducting qubits strongly coupled to a waveguide. Quantum interference between the photon emission pathways from the molecule generate single photons that selectively propagate in a chosen direction. This architecture is capable of both photon emission and capture, and can be tiled in series to form an extensible network of quantum processors with all-to-all connectivity.

Hexagonal Boron Nitride (hBN) as a Low-loss Dielectric for Superconducting Quantum Circuits and Qubits

  1. Joel I.J. Wang,
  2. Megan A. Yamoah,
  3. Qing Li,
  4. Amir Karamlou,
  5. Thao Dinh,
  6. Bharath Kannan,
  7. Jochen Braumüller,
  8. David Kim,
  9. Alexander J. Melville,
  10. Sarah E. Muschinske,
  11. Bethany M. Niedzielski,
  12. Kyle Serniak,
  13. Youngkyu Sung,
  14. Roni Winik,
  15. Jonilyn L. Yoder,
  16. Mollie Schwartz,
  17. Kenji Watanabe,
  18. Takashi Taniguchi,
  19. Terry P. Orlando,
  20. Simon Gustavsson,
  21. Pablo Jarillo-Herrero,
  22. and William D. Oliver
Dielectrics with low loss at microwave frequencies are imperative for high-coherence solid-state quantum computing platforms. We study the dielectric loss of hexagonal boron nitride
(hBN) thin films in the microwave regime by measuring the quality factor of parallel-plate capacitors (PPCs) made of NbSe2-hBN-NbSe2 heterostructures integrated into superconducting circuits. The extracted microwave loss tangent of hBN is bounded to be at most in the mid-10-6 range in the low temperature, single-photon regime. We integrate hBN PPCs with aluminum Josephson junctions to realize transmon qubits with coherence times reaching 25 μs, consistent with the hBN loss tangent inferred from resonator measurements. The hBN PPC reduces the qubit feature size by approximately two-orders of magnitude compared to conventional all-aluminum coplanar transmons. Our results establish hBN as a promising dielectric for building high-coherence quantum circuits with substantially reduced footprint and, with a high energy participation that helps to reduce unwanted qubit cross-talk.

Comparison of Dielectric Loss in Titanium Nitride and Aluminum Superconducting Resonators

  1. Alexander Melville,
  2. Greg Calusine,
  3. Wayne Woods,
  4. Kyle Serniak,
  5. Evan Golden,
  6. Bethany M. Niedzielski,
  7. David K. Kim,
  8. Arjan Sevi,
  9. Jonilyn L. Yoder,
  10. Eric A. Dauler,
  11. and William D. Oliver
Lossy dielectrics are a significant source of decoherence in superconducting quantum circuits. In this report, we model and compare the dielectric loss in bulk and interfacial dielectrics
in titanium nitride (TiN) and aluminum (Al) superconducting coplanar waveguide (CPW) resonators. We fabricate isotropically trenched resonators to produce a series of device geometries that accentuate a specific dielectric region’s contribution to resonator quality factor. While each dielectric region contributes significantly to loss in TiN devices, the metal-air interface dominates the loss in the Al devices. Furthermore, we evaluate the quality factor of each TiN resonator geometry with and without a post-process hydrofluoric (HF) etch, and find that it reduced losses from the substrate-air interface, thereby improving the quality factor.