Reducing materials and processing-induced decoherence is critical to the development of utility-scale quantum processors based on superconducting qubits. Here we report on the impactof two fluorine-based wet etches, which we use to treat the silicon surface underneath the Josephson junctions (JJs) of fixed-frequency transmon qubits made with aluminum base metallization. Using several materials analysis techniques, we demonstrate that these surface treatments can remove germanium residue introduced by our JJ fabrication with no other changes to the overall process flow. These surface treatments result in significantly improved energy relaxation times for the highest performing process, with median T1=334 μs, corresponding to quality factor Q=6.6×106. This result suggests that the metal-substrate interface directly underneath the JJs was a major contributor to microwave loss in these transmon qubit circuits prior to integration of these surface treatments. Furthermore, this work illustrates how materials analysis can be used in conjunction with quantum device performance metrics to improve performance in superconducting qubits.
We present a novel transmon qubit fabrication technique that yields systematic improvements in T1 coherence times. We fabricate devices using an encapsulation strategy that involvespassivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different capping materials and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T1 coherence times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 200 microseconds. Our comparative structural and chemical analysis suggests that amorphous niobium suboxides may induce higher losses. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.