Temporal fluctuations in the superconducting qubit lifetime, T1, bring up additional challenges in building a fault-tolerant quantum computer. While the exact mechanisms remain unclear,T1 fluctuations are generally attributed to the strong coupling between the qubit and a few near-resonant two-level systems (TLSs) that can exchange energy with an assemble of thermally fluctuating two-level fluctuators (TLFs) at low frequencies. Here, we report T1 measurements on the qubits with different geometrical footprints and surface dielectrics as a function of the temperature. By analyzing the noise spectrum of the qubit depolarization rate, Γ1=1/T1, we can disentangle the impact of TLSs, non-equilibrium quasiparticles (QPs), and equilibrium (thermally excited) QPs on the variance in Γ1. We find that Γ1 variances in the qubit with a small footprint are more susceptible to the QP and TLS fluctuations than those in the large-footprint qubits. Furthermore, the QP-induced variances in all qubits are consistent with the theoretical framework of QP diffusion and fluctuation. We suggest these findings can offer valuable insights for future qubit design and engineering optimization.
The performance of superconducting qubits is often limited by dissipation and two-level systems (TLS) losses. The dominant sources of these losses are believed to originate from amorphousmaterials and defects at interfaces and surfaces, likely as a result of fabrication processes or ambient exposure. Here, we explore a novel wet chemical surface treatment at the Josephson junction-substrate and the substrate-air interfaces by replacing a buffered oxide etch (BOE) cleaning process with one that uses hydrofluoric acid followed by aqueous ammonium fluoride. We show that the ammonium fluoride etch process results in a statistically significant improvement in median T1 by ∼22% (p=0.002), and a reduction in the number of strongly-coupled TLS in the tunable frequency range. Microwave resonator measurements on samples treated with the ammonium fluoride etch prior to niobium deposition also show ∼33% lower TLS-induced loss tangent compared to the BOE treated samples. As the chemical treatment primarily modifies the Josephson junction-substrate interface and substrate-air interface, we perform targeted chemical and structural characterizations to examine materials‘ differences at these interfaces and identify multiple microscopic changes that could contribute to decreased TLS.
Superconducting qubits can be sensitive to abrupt energy deposits caused by cosmic rays and ambient radioactivity. Previous studies have focused on understanding possible correlatedeffects over time and distance due to cosmic rays. In this study, for the first time, we directly compare the response of a transmon qubit measured initially at the Fermilab SQMS above-ground facilities and then at the deep underground Gran Sasso Laboratory (INFN-LNGS, Italy). We observe same average qubit lifetime T1 of roughly 80 microseconds at above and underground facilities. We then apply a fast decay detection protocol and investigate the time structure, sensitivity and relative rates of triggered events due to radiation versus intrinsic noise, comparing above and underground performance of several high-coherence qubits. Using gamma sources of variable activity we calibrate the response of the qubit to different levels of radiation in an environment with minimal background radiation. Results indicate that qubits respond to a strong gamma source and it is possible to detect particle impacts. However, when comparing above and underground results, we do not observe a difference in radiation induced-like events for these sapphire and niobium-based transmon qubits. We conclude that the majority of these events are not radiation related and to be attributed to other noise sources which by far dominate single qubit errors in modern transmon qubits.
Engineering high-fidelity two-qubit gates is an indispensable step toward practical quantum computing. For superconducting quantum platforms, one important setback is the stray interactionbetween qubits, which causes significant coherent errors. For transmon qubits, protocols for mitigating such errors usually involve fine-tuning the hardware parameters or introducing usually noisy flux-tunable couplers. In this work, we propose a simple scheme to cancel these stray interactions. The coupler used for such cancellation is a driven high-coherence resonator, where the amplitude and frequency of the drive serve as control knobs. Through the resonator-induced-phase (RIP) interaction, the static ZZ coupling can be entirely neutralized. We numerically show that such a scheme can enable short and high-fidelity entangling gates, including cross-resonance CNOT gates within 40 ns and adiabatic CZ gates within 140 ns. Our architecture is not only ZZ free but also contains no extra noisy components, such that it preserves the coherence times of fixed-frequency transmon qubits. With the state-of-the-art coherence times, the error of our cross-resonance CNOT gate can be reduced to below 1e-4.
We present a novel transmon qubit fabrication technique that yields systematic improvements in T1 coherence times. We fabricate devices using an encapsulation strategy that involvespassivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different capping materials and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T1 coherence times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 200 microseconds. Our comparative structural and chemical analysis suggests that amorphous niobium suboxides may induce higher losses. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.
The coherence times of many widely used superconducting qubits are limited by material defects that can be modeled as an ensemble of two-level systems (TLSs). Among them, charge fluctuatorsinside amorphous oxide layers are believed to contribute to both low-frequency 1/f charge noise and high-frequency dielectric loss, causing fast qubit dephasing and relaxation. Here, we propose to mitigate those noise channels by engineering the relevant TLS noise spectral densities. Specifically, our protocols smooth the high-frequency noise spectrum and suppress the low-frequency noise amplitude via relaxing and dephasing the TLSs, respectively. As a result, we predict a drastic stabilization in qubit lifetime and an increase in qubit pure dephasing time. Our detailed analysis of feasible experimental implementations shows that the improvement is not compromised by spurious coupling from the applied noise to the qubit.
Superconducting thin films of niobium have been extensively employed in transmon qubit architectures. Although these architectures have demonstrated remarkable improvements in recentyears, further improvements in performance through materials engineering will aid in large-scale deployment. Here, we use information retrieved from electron microscopy and analysis to conduct a detailed assessment of potential decoherence sources in transmon qubit test devices. In the niobium thin film, we observe the presence of localized strain at interfaces, which may amplify interactions between two-level systems and impose limits on T1 and T2 relaxation times. Additionally, we observe the presence of a surface oxide with varying stoichiometry and bond distances, which can generate a broad two-level system noise spectrum. Finally, a similarly disordered and rough interface is observed between Nb and the Si substrate. We propose that this interface can also degrade the overall superconducting properties.
Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despiterecent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of μs, material quality and interfacial structures continue to curb device performance. When niobium is deployed as the superconducting material, two-level system defects in the thin film and adjacent dielectric regions introduce stochastic noise and dissipate electromagnetic energy at the cryogenic operating temperatures. In this study, we utilize time-of-flight secondary ion mass spectrometry (TOF-SIMS) to understand the role specific fabrication procedures play in introducing such dissipation mechanisms in these complex systems. We interrogated Nb thin films and transmon qubit structures fabricated by Rigetti Computing and at the National Institute of Standards and Technology through slight variations in the processing and vacuum conditions. We find that when Nb film is sputtered onto the Si substrate, oxide and silicide regions are generated at various interfaces. We also observe that impurity species such as niobium hydrides and carbides are incorporated within the niobium layer during the subsequent lithographic patterning steps. The formation of these resistive compounds likely impact the superconducting properties of the Nb thin film. Additionally, we observe the presence of halogen species distributed throughout the patterned thin films. We conclude by hypothesizing the source of such impurities in these structures in an effort to intelligently fabricate superconducting qubits and extend coherence times moving forward.
We discuss a potentially dramatic source of quantum decoherence in three-dimensional niobium superconducting resonators and in two-dimensional transmon qubits that utilize oxidizedniobium: an aggravation of two-level system (TLS) induced losses driven by vacuum baking at temperatures and durations typically used in transmon qubit fabrication. By coupling RF measurements on cavities with time-of-flight secondary ion mass spectrometry studies on an SRF cavity cutout, we find that modest vacuum baking (150-200~∘C for 5~min-11~hrs) produces a partially depleted native niobium oxide which likely contains a large concentration of oxygen vacancies that drive TLS losses. Continued baking is found to eliminate this depleted layer and mediate these additional losses.
We report the first evidence of the formation of niobium hydrides within niobium films on silicon substrates in superconducting qubits fabricated at Rigetti Computing. We combine complementarytechniques including room and cryogenic temperature atomic scale high-resolution and scanning transmission electron microscopy (HR-TEM and STEM), atomic force microscopy (AFM), and the time-of-flight secondary ion mass spectroscopy (TOF-SIMS) to reveal the existence of the niobium hydride precipitates directly in the Rigetti chip areas. Electron diffraction and high-resolution transmission electron microscopy (HR-TEM) analyses are performed at room and cryogenic temperatures (~106 K) on superconducting qubit niobium film areas, and reveal the formation of three types of Nb hydride domains with different crystalline orientations and atomic structures. There is also variation in their size and morphology from small (~5 nm) irregular shape domains within the Nb grains to large (~10-100 nm) Nb grains fully converted to niobium hydride. As niobium hydrides are non-superconducting and can easily change in size and location upon different cooldowns to cryogenic temperatures, our findings highlight a new previously unknown source of decoherence in superconducting qubits, contributing to both quasiparticle and two-level system (TLS) losses, and offering a potential explanation for qubit performance changes upon cooldowns. A pathway to mitigate the formation of the Nb hydrides for superconducting qubit applications is also discussed.