Alternating Bias Assisted Annealing of Amorphous Oxide Tunnel Junctions

  1. David P. Pappas,
  2. Mark Field,
  3. Cameron Kopas,
  4. Joel A. Howard,
  5. Xiqiao Wang,
  6. Ella Lachman,
  7. Lin Zhou,
  8. Jinsu Oh,
  9. Kameshwar Yadavalli,
  10. Eyob A. Sete,
  11. Andrew Bestwick,
  12. Matthew J. Kramer,
  13. and Joshua Y. Mutus
We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional