Elucidating dielectric losses, structural heterogeneity, and interface imperfections is critical for improving coherence in superconducting qubits. However, most diagnostics rely ondestructive electron microscopy or low-throughput millikelvin quantum measurements. Here, we demonstrate noninvasive terahertz (THz) nano-imaging/-spectroscopy of encapsulated niobium transmon qubits, revealing sidewall near-field scattering that correlates with qubit coherence. We further employ a THz hyperspectral line scan to probe dielectric responses and field participation at Al junction interfaces. These findings highlight the promise of THz near-field methods as a high-throughput proxy characterization tool for guiding material selection and optimizing processing protocols to improve qubit and quantum circuit performance.
The Superconducting Materials and Systems (SQMS) Center, a DOE National Quantum Information Science Research Center, has conducted a comprehensive and coordinated study using superconductingtransmon qubit chips with known performance metrics to identify the underlying materials-level sources of device-to-device performance variation. Following qubit coherence measurements, these qubits of varying base superconducting metals and substrates have been examined with various nondestructive and invasive material characterization techniques at Northwestern University, Ames National Laboratory, and Fermilab as part of a blind study. We find trends in variations of the depth of the etched substrate trench, the thickness of the surface oxide, and the geometry of the sidewall, which when combined, lead to correlations with the T1 lifetime across different devices. In addition, we provide a list of features that varied from device to device, for which the impact on performance requires further studies. Finally, we identify two low-temperature characterization techniques that may potentially serve as proxy tools for qubit measurements. These insights provide materials-oriented solutions to not only reduce performance variations across neighboring devices, but also to engineer and fabricate devices with optimal geometries to achieve performance metrics beyond the state-of-the-art values.
The single flux quantum (SFQ) digital superconducting logic family has been proposed for the scalable control of next-generation superconducting qubit arrays. In the initial implementation,SFQ-based gate fidelity was limited by quasiparticle (QP) poisoning induced by the dissipative on-chip SFQ driver circuit. In this work, we introduce a multi-chip module architecture to suppress phonon-mediated QP poisoning. Here, the SFQ elements and qubits are fabricated on separate chips that are joined with In bump bonds. We use interleaved randomized benchmarking to characterize the fidelity of SFQ-based gates, and we demonstrate an error per Clifford gate of 1.2(1)%, an order-of-magnitude reduction over the gate error achieved in the initial realization of SFQ-based qubit control. We use purity benchmarking to quantify the contribution of incoherent error at 0.96(2)%; we attribute this error to photon-mediated QP poisoning mediated by the resonant mm-wave antenna modes of the qubit and SFQ-qubit coupler. We anticipate that a straightforward redesign of the SFQ driver circuit to limit the bandwidth of the SFQ pulses will eliminate this source of infidelity, allowing SFQ-based gates with fidelity approaching theoretical limits, namely 99.9% for resonant sequences and 99.99% for more complex pulse sequences involving variable pulse-to-pulse separation.