Entanglement Across Separate Silicon Dies in a Modular Superconducting Qubit Device

  1. Alysson Gold,
  2. JP Paquette,
  3. Anna Stockklauser,
  4. Matthew J. Reagor,
  5. M. Sohaib Alam,
  6. Andrew Bestwick,
  7. Nicolas Didier,
  8. Ani Nersisyan,
  9. Feyza Oruc,
  10. Armin Razavi,
  11. Ben Scharmann,
  12. Eyob A. Sete,
  13. Biswajit Sur,
  14. Davide Venturelli,
  15. Cody James Winkleblack,
  16. Filip Wudarski,
  17. Mike Harburn,
  18. and Chad Rigetti
Assembling future large-scale quantum computers out of smaller, specialized modules promises to simplify a number of formidable science and engineering challenges. One of the primary
challenges in developing a modular architecture is in engineering high fidelity, low-latency quantum interconnects between modules. Here we demonstrate a modular solid state architecture with deterministic inter-module coupling between four physically separate, interchangeable superconducting qubit integrated circuits, achieving two-qubit gate fidelities as high as 99.1±0.5\% and 98.3±0.3\% for iSWAP and CZ entangling gates, respectively. The quality of the inter-module entanglement is further confirmed by a demonstration of Bell-inequality violation for disjoint pairs of entangled qubits across the four separate silicon dies. Having proven out the fundamental building blocks, this work provides the technological foundations for a modular quantum processor: technology which will accelerate near-term experimental efforts and open up new paths to the fault-tolerant era for solid state qubit architectures.

Strong Coupling Cavity QED with Gate-Defined Double Quantum Dots Enabled by a High Impedance Resonator

  1. Anna Stockklauser,
  2. Pasquale Scarlino,
  3. Jonne Koski,
  4. Simone Gasparinetti,
  5. Christian Kraglund Andersen,
  6. Christian Reichl,
  7. Werner Wegscheider,
  8. Thomas Ihn,
  9. Klaus Ensslin,
  10. and Andreas Wallraff
The strong coupling limit of cavity quantum electrodynamics (QED) implies the capability of a matter-like quantum system to coherently transform an individual excitation into a single
photon within a resonant structure. This not only enables essential processes required for quantum information processing but also allows for fundamental studies of matter-light interaction. In this work we demonstrate strong coupling between the charge degree of freedom in a gate-detuned GaAs double quantum dot (DQD) and a frequency-tunable high impedance resonator realized using an array of superconducting quantum interference devices (SQUIDs). In the resonant regime, we resolve the vacuum Rabi mode splitting of size 2g/2π=238 MHz at a resonator linewidth κ/2π=12 MHz and a DQD charge qubit dephasing rate of γ2/2π=80 MHz extracted independently from microwave spectroscopy in the dispersive regime. Our measurements indicate a viable path towards using circuit based cavity QED for quantum information processing in semiconductor nano-structures.