Quantum batteries, as miniature energy storage devices, have sparked significant research interest in recent years. However, achieving rapid and stable energy transfer in quantum batterieswhile obeying quantum speed limits remains a critical challenge. In this work, we experimentally optimize the charging process by leveraging the unique energy level structure of a superconducting capacitively-shunted flux qubit, using counterdiabatic pulses in the stimulated Raman adiabatic passage. Compared to previous studies, we impose two different norm constraints on the driving Hamiltonian, achieving optimal charging without exceeding the overall driving strength. Furthermore, we experimentally demonstrate a charging process that achieves the quantum speed limit. In addition, we introduce a dimensionless parameter to unify charging speed and stability, offering a universal metric for performance optimization. In contrast to metrics such as charging power and thermodynamic efficiency, the criterion quantitatively captures the stability of ergentropy while also considering the charging speed. Our results highlight the potential of the capacitively-shunted qubit platform as an ideal candidate for realizing three-level quantum batteries and deliver novel strategies for optimizing energy transfer protocols.
The three-level system represents the smallest quantum system capable of autonomous cycling in quantum heat engines. This study proposes a method to demonstrate the actual thermodynamicsof a three-level quantum heat engine by designing and implementing superconducting quantum circuits. Following error mitigation, the outcomes from the quantum circuit model designed in this study, when executed on a real quantum device, closely align with theoretical predictions, thereby validating the effectiveness of the circuit model. This study offers a novel approach for investigating three-level quantum heat engines, enabling the verification of theoretical research findings while also reducing the complexity and cost of experimental procedures.
Spin qubits in semiconductors are currently one of the most promising architectures for quantum computing. However, they face challenges in realizing multi-qubit interactions over extendeddistances. Superconducting spin qubits provide a promising alternative by encoding a qubit in the spin degree of freedom of an Andreev level. Such an Andreev spin qubit could leverage the advantages of circuit quantum electrodynamic, enabled by an intrinsic spin-supercurrent coupling. The first realization of an Andreev spin qubit encoded the qubit in the excited states of a semiconducting weak-link, leading to frequent decay out of the computational subspace. Additionally, rapid qubit manipulation was hindered by the need for indirect Raman transitions. Here, we exploit a different qubit subspace, using the spin-split doublet ground state of an electrostatically-defined quantum dot Josephson junction with large charging energy. Additionally, we use a magnetic field to enable direct spin manipulation over a frequency range of 10 GHz. Using an all-electric microwave drive we achieve Rabi frequencies exceeding 200 MHz. We furthermore embed the Andreev spin qubit in a superconducting transmon qubit, demonstrating strong coherent qubit-qubit coupling. These results are a crucial step towards a hybrid architecture that combines the beneficial aspects of both superconducting and semiconductor qubits.
Quantum error correction will be an essential ingredient in realizing fault-tolerant quantum computing. However, most correction schemes rely on the assumption that errors are sufficientlyuncorrelated in space and time. In superconducting qubits this assumption is drastically violated in the presence of ionizing radiation, which creates bursts of high energy phonons in the substrate. These phonons can break Cooper-pairs in the superconductor and, thus, create quasiparticles over large areas, consequently reducing qubit coherence across the quantum device in a correlated fashion. A potential mitigation technique is to place large volumes of normal or superconducting metal on the device, capable of reducing the phonon energy to below the superconducting gap of the qubits. To investigate the effectiveness of this method we fabricate a quantum device with four nominally identical nanowire-based transmon qubits. On the device, half of the niobium-titanium-nitride ground plane is replaced with aluminum (Al), which has a significantly lower superconducting gap. We deterministically inject high energy phonons into the substrate by voltage biasing a galvanically isolated Josephson junction. In the presence of the low gap material, we find a factor of 2-5 less degradation in the injection-dependent qubit lifetimes, and observe that undesired excited qubit state population is mitigated by a similar factor. We furthermore turn the Al normal with a magnetic field, finding no change in the phonon-protection. This suggests that the efficacy of the protection in our device is not limited by the size of the superconducting gap in the Al ground plane. Our results provide a promising foundation for protecting superconducting qubit processors against correlated errors from ionizing radiation.
We realize a hybrid superconductor-semiconductor transmon device in which the Josephson effect is controlled by a gate-defined quantum dot in an InAs/Al nanowire. Microwave spectroscopyof the transmon’s transition spectrum allows us to probe the ground state parity of the quantum dot as a function of gate voltages, external magnetic flux, and magnetic field applied parallel to the nanowire. The measured parity phase diagram is in agreement with that predicted by a single-impurity Anderson model with superconducting leads. Through continuous time monitoring of the circuit we furthermore resolve the quasiparticle dynamics of the quantum dot Josephson junction across the phase boundaries. Our results can facilitate the realization of semiconductor-based 0−π qubits and Andreev qubits.
We report the detection of a gate-tunable kinetic inductance in a hybrid InAs/Al nanowire. For this purpose, we have embedded the nanowire into a quarter-wave coplanar waveguide resonatorand measured the resonance frequency of the circuit. We find that the resonance frequency can be changed via the gate voltage that controls the electron density of the proximitized semiconductor and thus the nanowire inductance. Applying Mattis-Bardeen theory, we extract the gate dependence of the normal state conductivity of the nanowire, as well as its superconducting gap. Our measurements complement existing characterization methods for hybrid nanowires and provide a new and useful tool for gate-controlled superconducting electronics.
Gate tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy probesto voltage-controlled qubit operations in gatemon and topological qubits. Common to all is that junction transparency plays a critical role. In this study, we grow single crystalline InAs, InSb and InAs1−xSbx nanowires with epitaxial superconductors and in-situ shadowed junctions in a single-step molecular beam epitaxy process. We investigate correlations between fabrication parameters, junction morphologies, and electronic transport properties of the junctions and show that the examined in-situ shadowed junctions are of significantly higher quality than the etched junctions. By varying the edge sharpness of the shadow junctions we show that the sharpest edges yield the highest junction transparency for all three examined semiconductors. Further, critical supercurrent measurements reveal an extraordinarily high ICRN, close to the KO−2 limit. This study demonstrates a promising engineering path towards reliable gate-tunable superconducting qubits.