Josephson junctions form the essential non-linearity for almost all superconducting qubits. The junction is formed when two superconducting electrodes come within ∼1 nm of each other.Although the capacitance of these electrodes is a small fraction of the total qubit capacitance, the nearby electric fields are more concentrated in dielectric surfaces and can contribute substantially to the total dissipation. We have developed a technique to experimentally investigate the effect of these electrodes on the quality of superconducting devices. We use λ/4 coplanar waveguide resonators to emulate lumped qubit capacitors. We add a variable number of these electrodes to the capacitive end of these resonators and measure how the additional loss scales with number of electrodes. We then reduce this loss with fabrication techniques that limit the amount of lossy dielectrics. We then apply these techniques to the fabrication of Xmon qubits on a silicon substrate to improve their energy relaxation times by a factor of 5.
Many superconducting qubit systems use the dispersive interaction between the qubit and a coupled harmonic resonator to perform quantum state measurement. Previous works have foundthat such measurements can induce state transitions in the qubit if the number of photons in the resonator is too high. We investigate these transitions and find that they can push the qubit out of the two-level subspace. Furthermore, these transitions show resonant behavior as a function of photon number. We develop a theory for these observations based on level crossings within the Jaynes-Cummings ladder, with transitions mediated by terms in the Hamiltonian which are typically ignored by the rotating wave approximation. We confirm the theory by measuring the photon occupation of the resonator when transitions occur while varying the detuning between the qubit and resonator.
Leakage errors occur when a quantum system leaves the two-level qubit subspace. Reducing these errors is critically important for quantum error correction to be viable. To quantifyleakage errors, we use randomized benchmarking in conjunction with measurement of the leakage population. We characterize single qubit gates in a superconducting qubit, and by refining our use of Derivative Reduction by Adiabatic Gate (DRAG) pulse shaping along with detuning of the pulses, we obtain gate errors consistently below 10−3 and leakage rates at the 10−5 level. With the control optimized, we find that a significant portion of the remaining leakage is due to incoherent heating of the qubit.
We present a lumped-element Josephson parametric amplifier designed to operate with strong coupling to the environment. In this regime, we observe broadband frequency dependent amplificationwith multi-peaked gain profiles. We account for this behaviour using the „pumpistor“ model which allows for frequency dependent variation of the external impedance. Using this understanding, we demonstrate control over gain profiles through changes in the environment impedance at a given frequency. With strong coupling to a suitable external impedance we observe a significant increase in dynamic range, and large amplification bandwidth up to 700 MHz giving near quantum-limited performance.
Superconducting microwave circuits based on coplanar waveguides (CPW) are susceptible to parasitic slotline modes which can lead to loss and decoherence. We motivate the use of superconductingairbridges as a reliable method for preventing the propagation of these modes. We describe the fabrication of these airbridges on superconducting resonators, which we use to measure the loss due to placing airbridges over CPW lines. We find that the additional loss at single photon levels is small, and decreases at higher drive powers.
We demonstrate a lumped-element Josephson Parametric Amplifier (LJPA), using a single-ended design that includes an on-chip, high-bandwidth flux bias line. The amplifier can be pumpedinto its region of parametric gain through either the input port or through the flux bias line. Broadband amplification is achieved at a tunable frequency $\omega/2 \pi$ between 5 to 7 GHz with quantum-limited noise performance, a gain-bandwidth product greater than 500 MHz, and an input saturation power in excess of -120 dBm. The bias line allows fast frequency tuning of the amplifier, with variations of hundreds of MHz over time scales shorter than 10 ns.