Kyle Serniak

Hexagonal Boron Nitride (hBN) as a Low-loss Dielectric for Superconducting Quantum Circuits and Qubits

  1. Joel I.J. Wang,
  2. Megan A. Yamoah,
  3. Qing Li,
  4. Amir Karamlou,
  5. Thao Dinh,
  6. Bharath Kannan,
  7. Jochen Braumüller,
  8. David Kim,
  9. Alexander J. Melville,
  10. Sarah E. Muschinske,
  11. Bethany M. Niedzielski,
  12. Kyle Serniak,
  13. Youngkyu Sung,
  14. Roni Winik,
  15. Jonilyn L. Yoder,
  16. Mollie Schwartz,
  17. Kenji Watanabe,
  18. Takashi Taniguchi,
  19. Terry P. Orlando,
  20. Simon Gustavsson,
  21. Pablo Jarillo-Herrero,
  22. and William D. Oliver
Dielectrics with low loss at microwave frequencies are imperative for high-coherence solid-state quantum computing platforms. We study the dielectric loss of hexagonal boron nitride
(hBN) thin films in the microwave regime by measuring the quality factor of parallel-plate capacitors (PPCs) made of NbSe2-hBN-NbSe2 heterostructures integrated into superconducting circuits. The extracted microwave loss tangent of hBN is bounded to be at most in the mid-10-6 range in the low temperature, single-photon regime. We integrate hBN PPCs with aluminum Josephson junctions to realize transmon qubits with coherence times reaching 25 μs, consistent with the hBN loss tangent inferred from resonator measurements. The hBN PPC reduces the qubit feature size by approximately two-orders of magnitude compared to conventional all-aluminum coplanar transmons. Our results establish hBN as a promising dielectric for building high-coherence quantum circuits with substantially reduced footprint and, with a high energy participation that helps to reduce unwanted qubit cross-talk.
arxiv pdf

Comparison of Dielectric Loss in Titanium Nitride and Aluminum Superconducting Resonators

  1. Alexander Melville,
  2. Greg Calusine,
  3. Wayne Woods,
  4. Kyle Serniak,
  5. Evan Golden,
  6. Bethany M. Niedzielski,
  7. David K. Kim,
  8. Arjan Sevi,
  9. Jonilyn L. Yoder,
  10. Eric A. Dauler,
  11. and William D. Oliver
Lossy dielectrics are a significant source of decoherence in superconducting quantum circuits. In this report, we model and compare the dielectric loss in bulk and interfacial dielectrics
in titanium nitride (TiN) and aluminum (Al) superconducting coplanar waveguide (CPW) resonators. We fabricate isotropically trenched resonators to produce a series of device geometries that accentuate a specific dielectric region’s contribution to resonator quality factor. While each dielectric region contributes significantly to loss in TiN devices, the metal-air interface dominates the loss in the Al devices. Furthermore, we evaluate the quality factor of each TiN resonator geometry with and without a post-process hydrofluoric (HF) etch, and find that it reduced losses from the substrate-air interface, thereby improving the quality factor.
arxiv pdf