Motivated by recent advancements highlighting Ta as a promising material in low-loss superconducting circuits and showing long coherence times in superconducting qubits, we have exploredthe effect of cryogenic temperatures on the growth of Ta and its integration in superconducting circuits. Cryogenic growth of Ta using a low temperature molecular beam epitaxy (MBE) system is found to stabilize single phase α-Ta on several different substrates, which include Al2O3(0001), Si(001), Si(111), SiNx, and GaAs(001). The substrates are actively cooled down to cryogenic temperatures and remain < 20 K during the Ta deposition. X-ray θ-2θ diffraction after warming to room temperature indicates the formation of polycrystalline α-Ta. The 50 nm α-Ta films grown on Al2O3(0001) at a substrate manipulator temperature of 7 K have a room temperature resistivity (ρ300K) of 13.4 μΩcm, a residual resistivity ratio (RRR) of 17.3 and a superconducting transition temperature (TC) of 4.14 K, which are comparable to bulk values. In addition, atomic force microscopy (AFM) indicates that the film grown at 7 K with an RMS roughness of 0.45 nm was significantly smoother than the one grown at room temperature. Similar properties are found for films grown on other substrates. Results for films grown at higher substrate manipulator temperatures show higher ρ300K, lower RRR and Tc, and increased β-Ta content. Coplanar waveguide resonators with a gap width of 3 μm fabricated from cryogenically grown Ta on Si(111) and Al2O3(0001) show low power Qi of 1.9 million and 0.7 million, respectively, indicating polycrystalline α-Ta films may be promising for superconducting qubit applications even though they are not fully epitaxial.[/expand]
Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despiterecent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of μs, material quality and interfacial structures continue to curb device performance. When niobium is deployed as the superconducting material, two-level system defects in the thin film and adjacent dielectric regions introduce stochastic noise and dissipate electromagnetic energy at the cryogenic operating temperatures. In this study, we utilize time-of-flight secondary ion mass spectrometry (TOF-SIMS) to understand the role specific fabrication procedures play in introducing such dissipation mechanisms in these complex systems. We interrogated Nb thin films and transmon qubit structures fabricated by Rigetti Computing and at the National Institute of Standards and Technology through slight variations in the processing and vacuum conditions. We find that when Nb film is sputtered onto the Si substrate, oxide and silicide regions are generated at various interfaces. We also observe that impurity species such as niobium hydrides and carbides are incorporated within the niobium layer during the subsequent lithographic patterning steps. The formation of these resistive compounds likely impact the superconducting properties of the Nb thin film. Additionally, we observe the presence of halogen species distributed throughout the patterned thin films. We conclude by hypothesizing the source of such impurities in these structures in an effort to intelligently fabricate superconducting qubits and extend coherence times moving forward.
A merged-element transmon (MET) device, based on Si fins, is proposed and the steps to form such a „FinMET“ are demonstrated. This new application of fin technology capitalizeson the anisotropic etch of Si(111) relative to Si(110) to define atomically flat, high aspect ratio Si tunnel barriers with epitaxial superconductor contacts on the parallel side-wall surfaces. This process circumvents the challenges associated with the growth of low-loss insulating barriers on lattice matched superconductors. By implementing low-loss, intrinsic float-zone Si as the barrier material rather than commonly used, lossy Al2O3, the FinMET is expected to overcome problems with standard transmons by (1) reducing dielectric losses; (2) minimizing the formation of two-level system spectral features; (3) exhibiting greater control over barrier thickness and qubit frequency spread, especially when combined with commercial fin fabrication and atomic-layer digital etching; (4) reducing the footprint by four orders of magnitude; and (5) allowing scalable fabrication. Here, fabrication of Si fins on Si(110) substrates with shadow-deposited Al electrodes is demonstrated. The formation of FinMET devices is expected to allow tunnel junction patterning with optical lithography. This facilitates uniform fabrication on Si wafers based on existing infrastructure for fin-based devices while simultaneously avoiding lossy amorphous dielectrics for tunnel barriers.