Millikelvin digital-to-analog converter for superconducting quantum processors

  1. Ruizi Hu,
  2. Zongyuan Li,
  3. Zhancheng Yao,
  4. Yufei Wu,
  5. Qiang Zhang,
  6. Yining Jiao,
  7. Quan Guan,
  8. Lijing Jin,
  9. Wangwei Lan,
  10. Chengyao Li,
  11. Lu Ma,
  12. Liyong Mao,
  13. Huijuan Zhan,
  14. Ze Zhan,
  15. Ran Gao,
  16. Lijuan Hu,
  17. Kannan Lu,
  18. Xizheng Ma,
  19. Tenghui Wang,
  20. Peng Xiang,
  21. Chunqing Deng,
  22. and Shasha Zhu
Scaling superconducting quantum processors is increasingly constrained by the wiring, heat load, and calibration overhead associated with delivering high-resolution analog signals from
room temperature to qubits at millikelvin temperature. Here we demonstrate a superconducting digital-to-analog converter (DAC) integrated with high-coherence fluxonium qubits in a multi-chip module architecture. The DACs generate persistent analog flux signals for tuning qubit parameters and are programmed deterministically using single-flux-quantum (SFQ) pulses, providing a digital interface compatible with established SFQ routing and demultiplexing technologies. Operating at millikelvin temperature, the DACs enable in-situ tuning of fluxonium qubits without measurable degradation of qubit coherence. The presented device provides a static control primitive for flux-tunable qubits, enabling parameter homogenization and eliminating the need for individual room-temperature DC bias lines. These results establish SFQ-programmable millikelvin DACs as a building block for digitally controlled superconducting quantum processors.

Vacuum-gap transmon qubits realized using flip-chip technology

  1. Xuegang Li,
  2. Yingshan Zhang,
  3. Chuhong Yang,
  4. Zhiyuan Li,
  5. Junhua Wang,
  6. Tang Su,
  7. Mo Chen,
  8. Yongchao Li,
  9. Chengyao Li,
  10. Zhenyu Mi,
  11. Xuehui Liang,
  12. Chenlu Wang,
  13. Zhen Yang,
  14. Yulong Feng,
  15. Kehuan Linghu,
  16. Huikai Xu,
  17. Jiaxiu Han,
  18. Weiyang Liu,
  19. Peng Zhao,
  20. Teng Ma,
  21. Ruixia Wang,
  22. Jingning Zhang,
  23. Yu Song,
  24. Pei Liu,
  25. Ziting Wang,
  26. Zhaohua Yang,
  27. Guangming Xue,
  28. Yirong Jin,
  29. and Haifeng Yu
Significant progress has been made in building large-scale superconducting quantum processors based on flip-chip technology. In this work, we use the flip-chip technology to realize
a modified transmon qubit, donated as the „flipmon“, whose large shunt capacitor is replaced by a vacuum-gap parallel plate capacitor. To further reduce the qubit footprint, we place one of the qubit pads and a single Josephson junction on the bottom chip and the other pad on the top chip which is galvanically connected with the single Josephson junction through an indium bump. The electric field participation ratio can arrive at nearly 53% in air when the vacuum-gap is about 5 microns, and thus potentially leading to a lower dielectric loss. The coherence times of the flipmons are measured in the range of 30-60 microseconds, which are comparable with that of traditional transmons with similar fabrication processes. The electric field simulation indicates that the metal-air interface’s participation ratio increases significantly and may dominate the qubit’s decoherence. This suggests that more careful surface treatment needs to be considered. No evidence shows that the indium bumps inside the flipmons cause significant decoherence. With well-designed geometry and good surface treatment, the coherence of the flipmons can be further improved.

Transmon qubit with relaxation time exceeding 0.5 milliseconds

  1. Chenlu Wang,
  2. Xuegang Li,
  3. Huikai Xu,
  4. Zhiyuan Li,
  5. Junhua Wang,
  6. Zhen Yang,
  7. Zhenyu Mi,
  8. Xuehui Liang,
  9. Tang Su,
  10. Chuhong Yang,
  11. Guangyue Wang,
  12. Wenyan Wang,
  13. Yongchao Li,
  14. Mo Chen,
  15. Chengyao Li,
  16. Kehuan Linghu,
  17. Jiaxiu Han,
  18. Yingshan Zhang,
  19. Yulong Feng,
  20. Yu Song,
  21. Teng Ma,
  22. Jingning Zhang,
  23. Ruixia Wang,
  24. Peng Zhao,
  25. Weiyang Liu,
  26. Guangming Xue,
  27. Yirong Jin,
  28. and Haifeng Yu
By using the dry etching process of tantalum (Ta) film, we had obtained transmon qubit with the best lifetime (T1) 503 us, suggesting that the dry etching process can be adopted in
the following multi-qubit fabrication with Ta film. We also compared the relaxation and coherence times of transmons made with different materials (Ta, Nb and Al) with the same design and fabrication processes of Josephson junction, we found that samples prepared with Ta film had the best performance, followed by those with Al film and Nb film. We inferred that the reason for this difference was due to the different loss of oxide materials located at the metal-air interface.