The performance of superconducting microwave circuits is strongly influenced by the material properties of the superconducting film and substrate. While progress has been made in understandingthe importance of surface preparation and the effect of surface oxides, the complex effect of superconductor film structure on microwave losses is not yet fully understood. In this study, we investigate the microwave properties of niobium resonators with different crystalline properties and related surface topographies. We analyze a series of magnetron sputtered films in which the Nb crystal orientation and surface topography are changed by varying the substrate temperatures between room temperature and 975 K. The lowest-loss resonators that we measure have quality factors of over one million at single-photon powers, among the best ever recorded using the Nb on sapphire platform. We observe the highest quality factors in films grown at an intermediate temperature regime of the growth series (550 K) where the films display both preferential ordering of the crystal domains and low surface roughness. Furthermore, we analyze the temperature-dependent behavior of our resonators to learn about how the quasiparticle density in the Nb film is affected by the niobium crystal structure and the presence of grain boundaries. Our results stress the connection between the crystal structure of superconducting films and the loss mechanisms suffered by the resonators and demonstrate that even a moderate change in temperature during thin film deposition can significantly affect the resulting quality factors.
Quantum transduction between the microwave and optical domains is an outstanding challenge for long-distance quantum networks based on superconducting qubits. For all transducers realizedto date, the generally weak light-matter coupling does not allow high transduction efficiency, large bandwidth, and low noise simultaneously. Here we show that a large electric dipole moment of an exciton in an optically active self-assembled quantum dot molecule (QDM) efficiently couples to a microwave field inside a superconducting resonator, allowing for efficient transduction between microwave and optical photons. Furthermore, every transduction event is heralded by a single-photon pulse generated at the QDM resonance, which can be used to generate entanglement between distant qubits. With an on-chip device, we demonstrate a sizeable single-photon coupling strength of 16 MHz. Thanks to the fast exciton decay rate in the QDM, the transduction bandwidth reaches several 100s of MHz.
The strong coupling limit of cavity quantum electrodynamics (QED) implies the capability of a matter-like quantum system to coherently transform an individual excitation into a singlephoton within a resonant structure. This not only enables essential processes required for quantum information processing but also allows for fundamental studies of matter-light interaction. In this work we demonstrate strong coupling between the charge degree of freedom in a gate-detuned GaAs double quantum dot (DQD) and a frequency-tunable high impedance resonator realized using an array of superconducting quantum interference devices (SQUIDs). In the resonant regime, we resolve the vacuum Rabi mode splitting of size 2g/2π=238 MHz at a resonator linewidth κ/2π=12 MHz and a DQD charge qubit dephasing rate of γ2/2π=80 MHz extracted independently from microwave spectroscopy in the dispersive regime. Our measurements indicate a viable path towards using circuit based cavity QED for quantum information processing in semiconductor nano-structures.