Implementing arbitrary single-qubit gates with near perfect fidelity is among the most fundamental requirements in gate-based quantum information processing. In this work, we fabrica transmon qubit with long coherence times and demonstrate single-qubit gates with the average gate error below 10−4, i.e. (7.42±0.04)×10−5 by randomized benchmarking (RB). To understand the error sources, we experimentally obtain an error budget, consisting of the decoherence errors lower bounded by (4.62±0.04)×10−5 and the leakage rate per gate of (1.16±0.04)×10−5. Moreover, we reconstruct the process matrices for the single-qubit gates by the gate set tomography (GST), with which we simulate RB sequences and obtain single-qubit fedlities consistent with experimental results. We also observe non-Markovian behavior in the experiment of long-sequence GST, which may provide guidance for further calibration. The demonstration extends the upper limit that the average fidelity of single-qubit gates can reach in a transmon-qubit system, and thus can be an essential step towards practical and reliable quantum computation in the near future.
Significant progress has been made in building large-scale superconducting quantum processors based on flip-chip technology. In this work, we use the flip-chip technology to realizea modified transmon qubit, donated as the „flipmon“, whose large shunt capacitor is replaced by a vacuum-gap parallel plate capacitor. To further reduce the qubit footprint, we place one of the qubit pads and a single Josephson junction on the bottom chip and the other pad on the top chip which is galvanically connected with the single Josephson junction through an indium bump. The electric field participation ratio can arrive at nearly 53% in air when the vacuum-gap is about 5 microns, and thus potentially leading to a lower dielectric loss. The coherence times of the flipmons are measured in the range of 30-60 microseconds, which are comparable with that of traditional transmons with similar fabrication processes. The electric field simulation indicates that the metal-air interface’s participation ratio increases significantly and may dominate the qubit’s decoherence. This suggests that more careful surface treatment needs to be considered. No evidence shows that the indium bumps inside the flipmons cause significant decoherence. With well-designed geometry and good surface treatment, the coherence of the flipmons can be further improved.
By using the dry etching process of tantalum (Ta) film, we had obtained transmon qubit with the best lifetime (T1) 503 us, suggesting that the dry etching process can be adopted inthe following multi-qubit fabrication with Ta film. We also compared the relaxation and coherence times of transmons made with different materials (Ta, Nb and Al) with the same design and fabrication processes of Josephson junction, we found that samples prepared with Ta film had the best performance, followed by those with Al film and Nb film. We inferred that the reason for this difference was due to the different loss of oxide materials located at the metal-air interface.