Correlated errors can significantly impact the quantum error correction, which challenges the assumption that errors occur in different qubits independently in both space and time.Superconducting qubits have been found to suffer correlated errors across multiple qubits, which could be attributable to ionizing radiations and cosmic rays. Nevertheless, the direct evidence and a quantitative understanding of this relationship are currently lacking. In this work, we propose to continuously monitor multi-qubit simultaneous charge-parity jumps to detect correlated errors and find that occur more frequently than multi-qubit simultaneous bit flips. Then, we propose to position two cosmic-ray muon detectors directly beneath the sample box in a dilution refrigerator and successfully observe the correlated errors in a superconducting qubit array triggered by muons. By introducing a lead shielding layer on the refrigerator, we also reveal that the majority of other correlated errors are primarily induced by gamma rays. Furthermore, we find the superconducting film with a higher recombination rate of quasiparticles used in the qubits is helpful in reducing the duration of correlated errors. Our results provide experimental evidence of the impact of gamma rays and muons on superconducting quantum computation and offer practical insights into mitigation strategies for quantum error correction. In addition, we observe the average occurrence rate of muon-induced correlated errors in our processor is approximately 0.40 min−1cm−2, which is comparable to the muon event rate detected by the muon detector with 0.506 min−1cm−2. This demonstrates the potential applications of superconducting qubit arrays as low-energy threshold sensors in the field of high-energy physics.
Noise within solid-state systems at low temperatures, where many of the degrees of freedom of the host material are frozen out, can typically be traced back to material defects thatsupport low-energy excitations. These defects can take a wide variety of microscopic forms, and for amorphous materials are broadly described using generic models such as the tunneling two-level systems (TLS) model. Although the details of TLS, and their impact on the low-temperature behavior of materials have been studied since the 1970s, these states have recently taken on further relevance in the field of quantum computing, where the limits to the coherence of superconducting microwave quantum circuits are dominated by TLS. Efforts to mitigate the impact of TLS have thus far focused on circuit design, material selection, and material surface treatment. In this work, we take a new approach that seeks to directly modify the properties of TLS through nanoscale-engineering. This is achieved by periodically structuring the host material, forming an acoustic bandgap that suppresses all microwave-frequency phonons in a GHz-wide frequency band around the operating frequency of a transmon qubit superconducting quantum circuit. For embedded TLS that are strongly coupled to the electric qubit, we measure a pronounced increase in relaxation time by two orders of magnitude when the TLS transition frequency lies within the acoustic bandgap, with the longest T1 time exceeding 5 milliseconds. Our work paves the way for in-depth investigation and coherent control of TLS, which is essential for deepening our understanding of noise in amorphous materials and advancing solid-state quantum devices.
Significant progress has been made in building large-scale superconducting quantum processors based on flip-chip technology. In this work, we use the flip-chip technology to realizea modified transmon qubit, donated as the „flipmon“, whose large shunt capacitor is replaced by a vacuum-gap parallel plate capacitor. To further reduce the qubit footprint, we place one of the qubit pads and a single Josephson junction on the bottom chip and the other pad on the top chip which is galvanically connected with the single Josephson junction through an indium bump. The electric field participation ratio can arrive at nearly 53% in air when the vacuum-gap is about 5 microns, and thus potentially leading to a lower dielectric loss. The coherence times of the flipmons are measured in the range of 30-60 microseconds, which are comparable with that of traditional transmons with similar fabrication processes. The electric field simulation indicates that the metal-air interface’s participation ratio increases significantly and may dominate the qubit’s decoherence. This suggests that more careful surface treatment needs to be considered. No evidence shows that the indium bumps inside the flipmons cause significant decoherence. With well-designed geometry and good surface treatment, the coherence of the flipmons can be further improved.
By using the dry etching process of tantalum (Ta) film, we had obtained transmon qubit with the best lifetime (T1) 503 us, suggesting that the dry etching process can be adopted inthe following multi-qubit fabrication with Ta film. We also compared the relaxation and coherence times of transmons made with different materials (Ta, Nb and Al) with the same design and fabrication processes of Josephson junction, we found that samples prepared with Ta film had the best performance, followed by those with Al film and Nb film. We inferred that the reason for this difference was due to the different loss of oxide materials located at the metal-air interface.
High fidelity two-qubit gates are fundamental for scaling up the superconducting number. We use two qubits coupled via a frequency-tunable coupler which can adjust the coupling strength,and demonstrate the CZ gate using two different schemes, adiabatic and di-adiabatic methods. The Clifford based Randomized Benchmarking (RB) method is used to assess and optimize the CZ gate fidelity. The fidelity of adiabatic and di-adiabatic CZ gates are 99.53(8)% and 98.72(2)%, respectively. We also analyze the errors induced by the decoherence, which are 92% of total for adiabatic CZ gate and 46% of total for di-adiabatic CZ gates. The adiabatic scheme is robust against the operation error. But the di-adiabatic scheme is sensitive to the purity and operation errors. Comparing to 30 ns duration time of adiabatic CZ gate, the duration time of di-adiabatic CZ gate is 19 ns, revealing lower incoherence error rincoherent,Clfford = 0.0197(5) than r′incoherent,Clfford = 0.0223(3).