Voltage Activated Parametric Entangling Gates on Gatemons

  1. Yinqi Chen,
  2. Konstantin N. Nesterov,
  3. Hugh Churchill,
  4. Javad Shabani,
  5. Vladimir E. Manucharyan,
  6. and Maxim G. Vavilov
We describe the generation of entangling gates on superconductor-semiconductor hybrid qubits by ac voltage modulation of the Josephson energy. Our numerical simulations demonstrate that the unitary error can be below 10−5 in a variety of 75-ns-long two-qubit gates (CZ, iSWAP, and iSWAP‾‾‾‾‾‾‾√) implemented using parametric resonance. We analyze the conditional ZZ phase and demonstrate that the CZ gate needs no further phase correction steps, while the ZZ phase error in SWAP-type gates can be compensated by choosing pulse parameters. With decoherence considered, we estimate that qubit relaxation time needs to exceed 70μs to achieve the 99.9% fidelity threshold.
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