Quasiparticle tunneling as a probe of Josephson junction quality and capacitor material in superconducting qubits

  1. C. Kurter,
  2. C. E. Murray,
  3. R.T. Gordon,
  4. B. B. Wymore,
  5. M. Sandberg,
  6. R. M. Shelby,
  7. A. Eddins,
  8. V. P. Adiga,
  9. A. D. K. Finck,
  10. E. Rivera,
  11. A.A. Stabile,
  12. B. Trimm,
  13. B. Wacaser,
  14. K. Balakrishnan,
  15. A. Pyzyna,
  16. J. Sleight,
  17. M. Steffen,
  18. and K. Rodbell
Non-equilibrium quasiparticles are possible sources for decoherence in superconducting qubits because they can lead to energy decay or dephasing upon tunneling across Josephson junctions.
Here, we investigate the impact of the intrinsic properties of two-dimensional transmon qubits on quasiparticle tunneling (QPT) and discuss how we can use QPT to gain critical information about the Josephson junction quality and device performance. We find the tunneling rate of the non-equilibrium quasiparticles to be sensitive to the choice of the shunting capacitor material and their geometry in qubits. In some devices, we observe an anomalous temperature dependence of the QPT rate below 100 mK that deviates from a constant background associated with non-equilibrium quasiparticles. We speculate that high transmission sites within the Josephson junction’s tunnel barrier can lead to this behavior, which we can model by assuming that the defect sites have a smaller effective superconducting gap than the leads of the junction. Our results present a unique characterization tool for tunnel barrier quality in Josephson junctions and shed light on how quasiparticles can interact with various elements of the qubit circuit.

Effects of surface treatments on flux tunable transmon qubits

  1. M. Mergenthaler,
  2. C. Müller,
  3. M. Ganzhorn,
  4. S. Paredes,
  5. P. Müller,
  6. G. Salis,
  7. V. P. Adiga,
  8. M. Brink,
  9. M. Sandberg,
  10. J. B. Hertzberg,
  11. S. Filipp,
  12. and A. Fuhrer
One of the main limitations in state-of-the art solid-state quantum processors are qubit decoherence and relaxation due to noise in their local environment. For the field to advance
towards full fault-tolerant quantum computing, a better understanding of the underlying microscopic noise sources is therefore needed. Adsorbates on surfaces, impurities at interfaces and material defects have been identified as sources of noise and dissipation in solid-state quantum devices. Here, we use an ultra-high vacuum package to study the impact of vacuum loading, UV-light exposure and ion irradiation treatments on coherence and slow parameter fluctuations of flux tunable superconducting transmon qubits. We analyse the effects of each of these surface treatments by comparing averages over many individual qubits and measurements before and after treatment. The treatments studied do not significantly impact the relaxation rate Γ1 and the echo dephasing rate Γe2, except for Ne ion bombardment which reduces Γ1. In contrast, flux noise parameters are improved by removing magnetic adsorbates from the chip surfaces with UV-light and NH3 treatments. Additionally, we demonstrate that SF6 ion bombardment can be used to adjust qubit frequencies in-situ and post fabrication without affecting qubit coherence at the sweet spot.

Ultrahigh Vacuum Packaging and Surface Cleaning for Quantum Devices

  1. M. Mergenthaler,
  2. S. Paredes,
  3. P. Müller,
  4. C. Müller,
  5. S. Filipp,
  6. M. Sandberg,
  7. J. Hertzberg,
  8. V. P. Adiga,
  9. M. Brink,
  10. and A. Fuhrer
We describe design, implementation and performance of an ultra-high vacuum (UHV) package for superconducting qubit chips or other surface sensitive quantum devices. The UHV loading
procedure allows for annealing, ultra-violet light irradiation, ion milling and surface passivation of quantum devices before sealing them into a measurement package. The package retains vacuum during the transfer to cryogenic temperatures by active pumping with a titanium getter layer. We characterize the treatment capabilities of the system and present measurements of flux tunable qubits with an average T1=84 μs and Techo2=134 μs after vacuum-loading these samples into a bottom loading dilution refrigerator in the UHV-package.