Towards a monolithic platform for coupling superconducting circuits to low-loss microwave phonons in AlScN on 4H-SiC

  1. Yuanchen Deng,
  2. William W. Roberts,
  3. Sueli Skinner-Ramos,
  4. Dalton Anderson,
  5. Katherine Hewey,
  6. Xingyu Du,
  7. Michael Miller,
  8. Brandon Smith,
  9. Hwijong Lee,
  10. Pingping Chen,
  11. Charles Thomas Harris,
  12. Roy H. Olsson III,
  13. Lisa Hackett,
  14. Rupert Lewis,
  15. and Matt Eichenfield
Hybrid superconducting-phonon quantum processing is promising for cavity QED, measurement-based quantum computing, and other quantum applications. Relative to microwave photons at the
same frequency, phonons can provide ultra-compact footprints, extremely low losses, and greater connectivity. Phonons can also couple strongly to superconducting circuits through the piezoelectric effect. However, this promise rests on scalable platforms that achieve these benefits without degrading superconducting circuit performance. This motivates a monolithic platform combining low phononic loss, strong electromechanical coupling, and superconducting-circuit compatibility without requiring suspended phononics. Here, we characterize a monolithic quantum acoustic platform combining aluminum superconducting circuits on exposed silicon carbide (SiC) with piezoelectric aluminum scandium nitride (AlScN) on SiC for integrated phononics. This architecture is enabled by selective removal of AlScN from selected chip regions, allowing aluminum superconducting microwave resonators to be fabricated directly on the SiC while preserving adjacent AlScN-on-SiC regions for phonon transduction. The resulting Al-on-SiC resonators exhibit a coherent lifetime of 2.9 {\mu}s, demonstrating compatibility with aluminum superconducting quantum devices. In parallel, cryogenic surface acoustic delay-line measurements on the retained AlScN-on-SiC regions show low phononic propagation loss at 4.05 GHz, corresponding to an estimated phonon lifetime of 7.6 {\mu}s. Together with a previously demonstrated electromechanical coupling coefficient of about 4.3% and a theoretical upper bound of 8%, these results establish Al-on-SiC/AlScN-on-SiC as a promising monolithic platform for integrating superconducting microwave circuits with piezoelectric phononic components for quantum acoustic networking and hybrid quantum systems.

Stress Accommodation in Nanoscale Dolan Bridges Designed for Superconducting Qubits

  1. Sueli Skinner-Ramos,
  2. Matthew L. Freeman,
  3. Douglas Pete,
  4. Rupert M. Lewis,
  5. Matthew Eichenfield,
  6. and C. Thomas Harris
Josephson junctions are the principal circuit element in numerous superconducting quantum information devices and can be readily integrated into large-scale electronics. However, device
integration at the wafer scale necessarily depends on having a reliable, high-fidelity, and high-yield fabrication method for creating Josephson junctions. When creating Al/AlOx based superconducting qubits, the standard Josephson junction fabrication method relies on a sub-micron suspended resist bridge, known as a Dolan bridge, which tends to be particularly fragile and can often times fracture during the resist development process, ultimately resulting in device failure. In this work, we demonstrate a unique Josephson junction lithography mask design that incorporates stress-relief channels. Our simulation results show that the addition of stress-relief channels reduces the lateral stress in the Dolan bridge by more than 70% for all the bridge geometries investigated. In practice, our novel mask design significantly increased the survivability of the bridge during device processing, resulting in 100% yield for over 100 Josephson junctions fabricated.