High-fidelity control of superconducting quantum processors requires accurate characterization of electromagnetic coupling strengths among the device’s constituent elements. Accuratelyextracting these couplings across large-scale architectures, presently featuring hundreds of qubits, poses a challenging multi-scale modeling problem. This requires resolving scales from the nanometer-scale geometry of Josephson junctions and their leads to the centimeter-scale size of the enclosing metallic packages. We present four numerical coupling extraction methods based on the avoided level crossing, the energy participation ratio, the induced electromotive force, and the impedance matrix. These methods are tailored to work with commercially available 3D electromagnetic solvers. We benchmark these techniques on a 10×10 array of transmon qubits, extracting their couplings to standing package modes. Our results show that these methods yield consistent coupling strengths with a maximum relative difference of less than 5%.
High-fidelity numerical methods that model the physical layout of a device are essential for the design of many technologies. For methods that characterize electromagnetic effects,these numerical methods are referred to as computational electromagnetics (CEM) methods. Although the CEM research field is mature, emerging applications can still stress the capabilities of the techniques in use today. The design of superconducting circuit quantum devices falls in this category due to the unconventional material properties and important features of the devices covering nanometer to centimeter scales. Such multiscale devices can stress the fundamental properties of CEM tools which can lead to an increase in simulation times, a loss in accuracy, or even cause no solution to be reliably found. While these challenges are being investigated by CEM researchers, knowledge about them is limited in the broader community of users of these CEM tools. This review is meant to serve as a practical introduction to the fundamental aspects of the major CEM techniques that a researcher may need to choose between to model a device, as well as provide insight into what steps they may take to alleviate some of their challenges. Our focus is on highlighting the main concepts without rigorously deriving all the details, which can be found in many textbooks and articles. After covering the fundamentals, we discuss more advanced topics related to the challenges of modeling multiscale devices with specific examples from superconducting circuit quantum devices. We conclude with a discussion on future research directions that will be valuable for improving the ability to successfully design increasingly more sophisticated superconducting circuit quantum devices. Although our focus and examples are taken from this area, researchers from other fields will still benefit from the details discussed here.