Despite constituting a smaller fraction of the qubits electromagnetic mode, surfaces and interfaces can exert significant influence as sources of high-loss tangents, which brings forwardthe need to reveal properties of these extended defects and identify routes to their control. Here, we examine the structure and composition of the metal-substrate interfacial layer that exists in Ta/sapphire-based superconducting films. Synchrotron-based X-ray reflectivity measurements of Ta films, commonly used in these qubits, reveal an unexplored interface layer at the metal-substrate interface. Scanning transmission electron microscopy and core-level electron energy loss spectroscopy identified an approximately 0.65 \ \text{nm} \pm 0.05 \ \text{nm} thick intermixing layer at the metal-substrate interface containing Al, O, and Ta atoms. Density functional theory (DFT) modeling reveals that the structure and properties of the Ta/sapphire heterojunctions are determined by the oxygen content on the sapphire surface prior to Ta deposition, as discussed for the limiting cases of Ta films on the O-rich versus Al-rich Al2O3 (0001) surface. By using a multimodal approach, integrating various material characterization techniques and DFT modeling, we have gained deeper insights into the interface layer between the metal and substrate. This intermixing at the metal-substrate interface influences their thermodynamic stability and electronic behavior, which may affect qubit performance.
The lifetime of superconducting qubits is limited by dielectric loss, and a major source of dielectric loss is the native oxide present at the surface of the superconducting metal.Specifically, tantalum-based superconducting qubits have been demonstrated with record lifetimes, but a major source of loss is the presence of two-level systems (TLSs) in the surface tantalum oxide. Here, we demonstrate a strategy for avoiding oxide formation by encapsulating the tantalum with noble metals that do not form native oxide. By depositing a few nanometers of Au or AuPd alloy before breaking vacuum, we completely suppress tantalum oxide formation. Microwave loss measurements of superconducting resonators reveal that the noble metal is proximitized, with a superconducting gap over 80% of the bare tantalum at thicknesses where the oxide is fully suppressed. We find that losses in resonators fabricated by subtractive etching are dominated by oxides on the sidewalls, suggesting total surface encapsulation by additive fabrication as a promising strategy for eliminating surface oxide TLS loss in superconducting qubits.
Superconducting qubits are a leading system for realizing large scale quantum processors, but overall gate fidelities suffer from coherence times limited by microwave dielectric loss.Recently discovered tantalum-based qubits exhibit record lifetimes exceeding 0.3 ms. Here we perform systematic, detailed measurements of superconducting tantalum resonators in order to disentangle sources of loss that limit state-of-the-art tantalum devices. By studying the dependence of loss on temperature, microwave photon number, and device geometry, we quantify materials-related losses and observe that the losses are dominated by several types of saturable two level systems (TLSs), with evidence that both surface and bulk related TLSs contribute to loss. Moreover, we show that surface TLSs can be altered with chemical processing. With four different surface conditions, we quantitatively extract the linear absorption associated with different surface TLS sources. Finally, we quantify the impact of the chemical processing at single photon powers, the relevant conditions for qubit device performance. In this regime we measure resonators with internal quality factors ranging from 5 to 15 x 10^6, comparable to the best qubits reported. In these devices the surface and bulk TLS contributions to loss are comparable, showing that systematic improvements in materials on both fronts will be necessary to improve qubit coherence further.
This work presents a computational analysis of a superconducting transmon qubit design, in which the superconductor-insulator-superconductor (SIS) Josephson junction is replaced bya co-planar, superconductor-constriction-superconductor (ScS) junction. For short junctions having a Kulik-Omelyanchuk current-phase relationship, we find that the ScS transmon has an improved charge dispersion compared to the SIS transmon, with a tradeoff of 50% smaller anharmonicity. These calculations provide a framework for estimating the superconductor material properties and junction dimensions needed to provide proper ScS transmon operation at typical gigahertz frequencies.