We present measurements and simulations of superconducting Nb co-planar waveguide resonators on sapphire substrate down to millikelvin temperature range with different readout powers.In the high temperature regime, we demonstrate that the Nb film residual surface resistance is comparable to that observed in the ultra-high quality, bulk Nb 3D superconducting radio frequency cavities while the resonator quality is dominated by the BCS thermally excited quasiparticles. At low temperature both the resonator quality factor and frequency can be well explained using the two-level system models. Through the energy participation ratio simulations, we find that the two-level system loss tangent is ∼10−2, which agrees quite well with similar studies performed on the Nb 3D cavities.
Epitaxially-grown superconductor/dielectric/superconductor trilayers have the potential to form high-performance superconducting quantum devices and may even allow scalable superconductingquantum computing with low-surface-area qubits such as the merged-element transmon. In this work, we measure the power-independent loss and two-level-state (TLS) loss of epitaxial, wafer-bonded, and substrate-removed Al/GaAs/Al trilayers by measuring lumped element superconducting microwave resonators at millikelvin temperatures and down to single photon powers. The power-independent loss of the device is (4.8±0.1)×10−5 and resonator-induced intrinsic TLS loss is (6.4±0.2)×10−5. Dielectric loss extraction is used to determine a lower bound of the intrinsic TLS loss of the trilayer of 7.2×10−5. The unusually high power-independent loss is attributed to GaAs’s intrinsic piezoelectricity.
Transmon qubits are ubiquitous in the pursuit of quantum computing using superconducting circuits. However, they have some drawbacks that still need to be addressed. Most importantly,the scalability of transmons is limited by the large device footprint needed to reduce the participation of the lossy capacitive parts of the circuit. In this work, we investigate and evaluate losses in a novel device geometry, namely, the merged-element transmon (mergemon). To this end, we replace the large external shunt capacitor of a traditional transmon with the intrinsic capacitance of a Josephson junction (JJ) and achieve an approximately 100 times reduction in qubit dimensions. We report the implementation of the mergemon using a sputtered Nb/amorphous Si (a-Si)/Nb trilayer film. In an experiment below 10 mK, the frequency of the readout resonator, capacitively coupled to the mergemon, exhibits a qubit-state dependent shift in the low power regime. The device also demonstrates the single- and multi-photon transitions that symbolize a weakly anharmonic system in the two-tone spectroscopy. The transition spectra are explained well with master-equation simulations. A participation ratio analysis identifies the dielectric loss of the a-Si tunnel barrier and its interfaces as the dominant source for qubit relaxation. We expect the mergemon to achieve high coherence in relatively small device dimensions when implemented using a low-loss, epitaxially-grown, and lattice-matched trilayer.
The investigation of two-level-state (TLS) loss in dielectric materials and interfaces remains at the forefront of materials research in superconducting quantum circuits. We demonstratea method of TLS loss extraction of a thin film dielectric by measuring a lumped element resonator fabricated from a superconductor-dielectric-superconductor trilayer. We extract the dielectric loss by formulating a circuit model for a lumped element resonator with TLS loss and then fitting to this model using measurements from a set of three resonator designs: a coplanar waveguide resonator, a lumped element resonator with an interdigitated capacitor, and a lumped element resonator with a parallel plate capacitor that includes the dielectric thin film of interest. Unlike other methods, this allows accurate measurement of materials with TLS loss lower than 10−6. We demonstrate this method by extracting a TLS loss of 1.02×10−3 for sputtered Al2O3 using a set of samples fabricated from an Al/Al2O3/Al trilayer. We observe a difference of 11% between extracted loss of the trilayer with and without the implementation of this method.
Fabrication of sub-micron Josephson junctions is demonstrated using standard processing techniques for high-coherence, superconducting qubits. These junctions are made in two separatelithography steps with normal-angle evaporation. Most significantly, this work demonstrates that it is possible to achieve high coherence with junctions formed on aluminum surfaces cleaned in situ with Ar milling before the junction oxidation. This method eliminates the angle-dependent shadow masks typically used for small junctions. Therefore, this is conducive to the implementation of typical methods for improving margins and yield using conventional CMOS processing. The current method uses electron-beam lithography and an additive process to define the top and bottom electrodes. Extension of this work to optical lithography and subtractive processes is discussed.
It has been known since the early days of quantum mechanics that hyperbolic secant pulses possess the unique property that they can perform cyclic evolution on two-level quantum systemsindependently of the pulse detuning. More recently, it was realized that they induce detuning- controlled phases without changing state populations. Here, we experimentally demonstrate the properties of hyperbolic secant pulses on superconducting transmon qubits and contrast them with the more commonly used Gaussian and square waves. We further show that these properties can be exploited to implement phase gates, nominally without exiting the computational subspace. This enables us to demonstrate the first microwave-driven Z-gates with a single control parameter, the detuning.
We report experiments on superconducting flux qubits in a circuit quantum electrodynamics (cQED) setup. Two qubits, independently biased and controlled, are coupled to a coplanar waveguideresonator. Dispersive qubit state readout reaches a maximum contrast of 72%. We find intrinsic energy relaxation times at the symmetry point of 7μs and 20μs and levels of flux noise of 2.6μΦ0/Hz‾‾‾√ and 2.7μΦ0/Hz‾‾‾√ at 1 Hz for the two qubits. We discuss the origin of decoherence in the measured devices. These results demonstrate the potential of cQED as a platform for fundamental investigations of decoherence and quantum dynamics of flux qubits.
We present experiments on the dynamics of a two-state parametric fluctuator in a superconducting flux qubit. In spectroscopic measurements, the fluctuator manifests itself as a doubletline. When the qubit is excited in resonance with one of the two doublet lines, the correlation of readout results exhibits an exponential time decay which provides a measure of the fluctuator transition rate. The rate increases with temperature in the interval 40 to 158 mK. Based on the magnitude of the transition rate and the doublet line splitting we conclude that the fluctuation is induced by quasiparticle tunneling. These results demonstrate the importance of considering quasiparticles as a source of decoherence in flux qubits.