Guangyue Wang

Transmon qubit with relaxation time exceeding 0.5 milliseconds

  1. Chenlu Wang,
  2. Xuegang Li,
  3. Huikai Xu,
  4. Zhiyuan Li,
  5. Junhua Wang,
  6. Zhen Yang,
  7. Zhenyu Mi,
  8. Xuehui Liang,
  9. Tang Su,
  10. Chuhong Yang,
  11. Guangyue Wang,
  12. Wenyan Wang,
  13. Yongchao Li,
  14. Mo Chen,
  15. Chengyao Li,
  16. Kehuan Linghu,
  17. Jiaxiu Han,
  18. Yingshan Zhang,
  19. Yulong Feng,
  20. Yu Song,
  21. Teng Ma,
  22. Jingning Zhang,
  23. Ruixia Wang,
  24. Peng Zhao,
  25. Weiyang Liu,
  26. Guangming Xue,
  27. Yirong Jin,
  28. and Haifeng Yu
By using the dry etching process of tantalum (Ta) film, we had obtained transmon qubit with the best lifetime (T1) 503 us, suggesting that the dry etching process can be adopted in
the following multi-qubit fabrication with Ta film. We also compared the relaxation and coherence times of transmons made with different materials (Ta, Nb and Al) with the same design and fabrication processes of Josephson junction, we found that samples prepared with Ta film had the best performance, followed by those with Al film and Nb film. We inferred that the reason for this difference was due to the different loss of oxide materials located at the metal-air interface.
arxiv pdf