significantly reduces the critical temperature (Tc) and broadens the superconducting transition as the film thickness and device size decrease. We measure electron dephasing rates via magnetoresistance from Tc to ∼4Tc in various-thickness TiN films. Electron dephasing occurs on the picosecond timescale and is nearly independent of temperature, differing from the expected inelastic scattering due to the electron-phonon and electron-electron interactions near Tc, which occur over a nanosecond timescale. We propose spin-flip scattering as a possible additional phase-breaking mechanism. The significant increase in the dephasing rate for the thinnest film indicates that magnetic disorder resides near the surface of naturally oxidized films. Our research suggests that magnetic disorder may be a significant contributor to RF dissipation in superconducting devices based on TiN.