Coupled-Mode Equations with Arbitrary Mode Combinations for Kinetic-Inductance Superconducting Traveling-Wave Parametric Devices: Theory and Experimental Validation

  1. F. Patricio Mena,
  2. Camilo Espinoza,
  3. Ryan O. Berriel,
  4. Ricardo Finger,
  5. and David J. Thoen
The coupled-mode equations (CMEs) have proven very successful in describing parametric processes in nonlinear optics. More recently, the same formulation has been used to model microwave
superconducting parametric amplifiers and frequency multipliers. However, when applied to the microwave regime, not all assumptions remain valid and losses play a more dramatic role. Here, we revisit the CMEs applied to traveling-wave superconducting amplifiers to include losses and provide a formulation that enables their systematic derivation for any combination of traveling waves. As examples, we discuss the impact of unwanted harmonics and intermodulation products on parametric amplification, as well as harmonic generation. We verify that, if not properly accounted for, device performance can deviate considerably from the ideal case. Furthermore, using a superconducting CPW-based artificial transmission line and combining an independent experimental determination of its nonlinear parameter I′∗ with simulations of its linear properties, we obtain a parameter-free validation of this formulation. The nonlinear parameter was determined to be I′∗≈27 mA which, surprisingly, scales with the theoretical depairing current and not with the much smaller critical current of the device. For the validation, we measured multiple-harmonic generation and found excellent agreement between theory and experiment. The fact that I′∗≫IC has direct implications for device design.

Characterization of low-loss hydrogenated amorphous silicon films for superconducting resonators

  1. Bruno T. Buijtendorp,
  2. Juan Bueno,
  3. David J. Thoen,
  4. Vignesh Murugesan,
  5. Paolo M. Sberna,
  6. Jochem J.A. Baselmans,
  7. Sten Vollebregt,
  8. and Akira Endo
Superconducting resonators used in millimeter-submillimeter astronomy would greatly benefit from deposited dielectrics with a small dielectric loss. We deposited hydrogenated amorphous
silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100°C, 250°C and 350° C. The measured void volume fraction, hydrogen content, microstructure parameter, and bond-angle disorder are negatively correlated with the substrate temperature. All three films have a loss tangent below 10−5 for a resonator energy of 105 photons, at 120 mK and 4-7 GHz. This makes these films promising for microwave kinetic inductance detectors and on-chip millimeter-submilimeter filters.