Superconducting circuit simulator of Bose-Hubbard model with a flat band

  1. Xiu-Hao Deng,
  2. Chen-Yen Lai,
  3. and Chih-Chun Chien
Recent advance in quantum simulations of interacting photons using superconducting circuits offers opportunities for investigating the Bose-Hubbard model in various geometries with
hopping coefficients and self-interactions tuned to both signs. Here we investigate phenomena related to localized states associated with a flat-band supported by the saw-tooth geometry. A localization-delocalization transition emerges in the non-interacting regime as the sign of hopping coefficient is changed. In the presence of interactions, patterns of localized states approach a uniform density distribution for repulsive interactions while interesting localized density patterns can arise in strongly attractive regime. The density patterns indicate the underlying inhomogeneity of the simulator. Two-particle correlations can further distinguish the nature of the localized states in attractive and repulsive interaction regimes. We also survey possible experimental implementations of the simulator.

Site-wise manipulations and Mott insulator-superfluid transition of interacting photons using superconducting circuit simulators

  1. Xiuhao Deng,
  2. Chunjing Jia,
  3. and Chih-Chun Chien
The Bose Hubbard model (BHM) of interacting bosons in a lattice has been a paradigm in many-body physics, and it exhibits a Mott insulator (MI)-superfluid (SF) transition at integer
filling. Here a quantum simulator of the BHM using a superconducting circuit is proposed. Specifically, a superconducting transmission line resonator supporting microwave photons is coupled to a charge qubit to form one site of the BHM, and adjacent sites are connected by a tunable coupler. To obtain a mapping from the superconducting circuit to the BHM, we focus on the dispersive regime where the excitations remain photon-like. Standard perturbation theory is implemented to locate the parameter range where the MI-SF transition may be simulated. This simulator allows single-site manipulations and we illustrate this feature by considering two scenarios where a single-site manipulation can drive a MI-SF transition. The transition can be analyzed by mean-field analyses, and the exact diagonalization was implemented to provide accurate results. The variance of the photon density and the fidelity metric clearly show signatures of the transition. Experimental realizations and other possible applications of this simulator are also discussed.