of state-of-the-art transmons, and the origin of this discrepancy is not fully understood. Here, we co-fabricate gatemons and SIS-junction transmons with nominally identical circuit layouts, gate dielectrics, and control lines, so that the Josephson element is the only intentional distinction. Across multiple chips, transmons in this architecture reach relaxation times in the tens of microseconds, whereas gatemons saturate in the few-microsecond range. Using the transmons as on-chip references, we construct a loss budget including Purcell decay, spontaneous emission through the control line, and internal dielectric loss, and find that the corresponding T1 limits exceed all measured gatemon values by more than an order of magnitude. Temperature-dependent T1 measurements follow a common quasiparticle-activation model and yield similar superconducting gaps for S-Sm-S and SIS junctions, indicating that the reduced gatemon coherence is dominated by additional temperature-independent, junction-intrinsic dissipation.