Open-Source Highly Parallel Electromagnetic Simulations for Superconducting Circuits

  1. David Sommers,
  2. Prasanna Pakkiam,
  3. Zach Degnan,
  4. Chun-Ching Chiu,
  5. Divita Gautam,
  6. Yi-Hsun Chen,
  7. and Arkady Fedorov
Electromagnetic simulations form an indispensable part of the design and optimization process for superconducting quantum devices. Although several commercial platforms exist, open-source
alternatives optimized for high-performance computing remain limited. To address this gap, we introduce SQDMetal, a Python-based API that integrates Qiskit Metal (IBM), Gmsh, Palace (AWS), and Paraview (Kitware) into an open-source, highly parallel simulation workflow for superconducting quantum circuits. SQDMetal enables accurate, efficient, and scalable simulations while remaining community-driven and free from commercial constraints. In this work, we validate SQDMetal through mesh convergence studies which benchmark SQDMetal against COMSOL Multiphysics and Ansys, demonstrating excellent agreement for both eigenmode and electrostatic (capacitance) simulations. Furthermore, we simulate superconducting resonators and transmon qubits, showing reasonable agreement with experimental measurements. SQDMetal also supports advanced capabilities, including Hamiltonian extraction via the energy participation ratio (EPR) method, incorporation of kinetic inductance effects, and full 3D modelling of device geometry for improved predictive accuracy. By unifying open-source tools into a single framework, SQDMetal lowers the barriers to entry for community members seeking to access high-performance simulations to assist in the design and optimization of their devices.

Ternary Metal Oxide Substrates for Superconducting Circuits

  1. Zach Degnan,
  2. Xin He,
  3. Alejandro Gomez Frieiro,
  4. Yauhen P. Sachkou,
  5. Arkady Fedorov,
  6. and Peter Jacobson
Substrate material imperfections and surface losses are one of the major factors limiting superconducting quantum circuitry from reaching the scale and complexity required to build
a practicable quantum computer. One potential path towards higher coherence of superconducting quantum devices is to explore new substrate materials with a reduced density of imperfections due to inherently different surface chemistries. Here, we examine two ternary metal oxide materials, spinel (MgAl2O4) and lanthanum aluminate (LaAlO3), with a focus on surface and interface characterization and preparation. Devices fabricated on LaAlO3 have quality factors three times higher than earlier devices, which we attribute to a reduction in interfacial disorder. MgAl2O4 is a new material in the realm of superconducting quantum devices and, even in the presence of significant surface disorder, consistently outperforms LaAlO3. Our results highlight the importance of materials exploration, substrate preparation, and characterization to identify materials suitable for high-performance superconducting quantum circuitry.

Near-Field Terahertz Nanoscopy of Coplanar Microwave Resonators

  1. Xiao Guo,
  2. Xin He,
  3. Zach Degnan,
  4. Bogdan C. Donose,
  5. Karl Bertling,
  6. Arkady Fedorov,
  7. Aleksandar D. Rakić,
  8. and Peter Jacobson
Superconducting quantum circuits are one of the leading quantum computing platforms. To advance superconducting quantum computing to a point of practical importance, it is critical
to identify and address material imperfections that lead to decoherence. Here, we use terahertz Scanning Near-field Optical Microscopy (SNOM) to probe the local dielectric properties and carrier concentrations of wet-etched aluminum resonators on silicon, one of the most characteristic components of the superconducting quantum processors. Using a recently developed vector calibration technique, we extract the THz permittivity from spectroscopy in proximity to the microwave feedline. Fitting the extracted permittivity to the Drude model, we find that silicon in the etched channel has a carrier concentration greater than buffer oxide etched silicon and we explore post-processing methods to reduce the carrier concentrations. Our results show that near-field THz investigations can be applied to quantitatively evaluate and identify potential loss channels in quantum devices.