we report the low-temperature performance of custom cryo-CMOS band-gap reference circuits designed to provide stable voltages and currents on-chip, independent of local temperature fluctuations. Our circuits are fabricated in 0.35 um silicon Germanium (SiGe) BiCMOS and 28 nm Fully Depleted Silicon On Insulator (FDSOI) CMOS processes, and we compare the performance of each. Beyond their specific application as low-power references, these circuits are ideal test-vehicles for developing design approaches that mitigate the adverse effects of cryogenic temperatures on circuit performance.
Cryo-CMOS Band-gap Reference Circuits for Quantum Computing
The control interface of a large-scale quantum computer will likely require electronic sub-systems that operate in close proximity to the qubits, at deep cryogenic temperatures. Here,