The presence of non-equilibrium quasiparticles in superconducting resonators and qubits operating at millikelvin temperature has been known for decades. One metric for the number ofquasiparticles affecting qubits is the rate of single-electron change in charge on the qubit island (i.e. the charge parity rate). Here, we have utilized a Ramsey-like pulse sequence to monitor changes in the parity states of five transmon qubits. The five qubits have shunting capacitors with two different geometries and fabricated from both Al and Ta. The charge parity rate differs by a factor of two for the two transmon designs studied here but does not depend on the material of the shunting capacitor. The underlying mechanism of the source of parity switching is further investigated in one of the qubit devices by increasing the quasiparticle trapping rate using induced vortices in the electrodes of the device. The charge parity rate exhibited a weak dependence on the quasiparticle trapping rate, indicating that the main source of charge parity events is from the production of quasiparticles across the Josephson junction. To estimate this source of quasiparticle production, we simulate and estimate pair-breaking photon absorption rates for our two qubit geometries and find a similar factor of two in the absorption rate for a background blackbody radiation temperature of T∗∼ 350 mK.
Extraneous high frequency chip modes parasitic to superconducting quantum circuits can result in decoherence when these modes are excited. To suppress these modes, superconducting airbridges (AB) are commonly used to electrically connect ground planes together when interrupted by transmission lines. Here, we demonstrate the use of two-photon photolithography to build a supporting 3D resist structure in conjunction with a lift-off process to create AB. The resulting aluminum AB, have a superconducting transition temperature Tc=1.08 K and exhibit good mechanical strength up to lengths of 100 μm. A measurable amount of microwave loss is observed when 35 AB were placed over a high-Q Ta quarter-wave coplanar waveguide resonator.
Low-loss superconducting microwave devices are required for quantum computation. Here, we present a series of measurements and simulations showing that conducting losses in the packagingof our superconducting resonator devices affect the maximum achievable internal quality factors (Qi) for a series of thin-film Al quarter-wave resonators with fundamental resonant frequencies varying between 4.9 and 5.8 GHz. By utilizing resonators with different widths and gaps, we sampled different electromagnetic energy volumes for the resonators affecting Qi. When the backside of the sapphire substrate of the resonator device is adhered to a Cu package with a conducting silver glue, a monotonic decrease in the maximum achievable Qi is found as the electromagnetic sampling volume is increased. This is a result of induced currents in large surface resistance regions and dissipation underneath the substrate. By placing a hole underneath the substrate and using superconducting material for the package, we decrease the ohmic losses and increase the maximum Qi for the larger size resonators.
We have fabricated and characterized asymmetric gap-engineered junctions and transmon devices. To create Josephson junctions with asymmetric gaps, Ti was used to proximitize and lowerthe superconducting gap of the Al counter-electrode. DC IV measurements of these small, proximitized Josephson junctions show a reduced gap and larger excess current for voltage biases below the superconducting gap when compared to standard Al/AlOx/Al junctions. The energy relaxation time constant for an Al/AlOx/Al/Ti 3D transmon was T1 = 1 {\mu}s, over two orders of magnitude shorter than the measured T1 = 134 {\mu}s of a standard Al/AlOx/Al 3D transmon. Intentionally adding disorder between the Al and Ti layers reduces the proximity effect and subgap current while increasing the relaxation time to T1 = 32 {\mu}s.