losses while providing new functionalities, such as large kinetic inductance or compatibility with CMOS platform are sought for. Here we report on a combined direct current (DC) and microwave investigation of titanium nitride lms of dierent thicknesses grown using CMOS compatible methods. For microwave resonators made of TiN lm of thickness ∼3 nm, we measured large kinetic inductance LK ∼ 240 pH/sq, high mode impedance of ∼ 4.2 kΩ while maintaining microwave quality factor ∼ 10^5 in the single photon limit. We present an in-depth study of the microwave loss mechanisms in these devices that indicates the importance of quasiparticles and provide insights for further improvement.