Improvements in circuit design and more recently in materials and surface cleaning have contributed to a rapid development of coherent superconducting qubits. However, organic resistscommonly used for shadow evaporation of Josephson junctions (JJs) pose limitations due to residual contamination, poor thermal stability and compatibility under typical surface-cleaning conditions. To provide an alternative, we developed an inorganic SiO2/Si3N4 on-chip stencil lithography mask for JJ fabrication. The stencil mask is resilient to aggressive cleaning agents and it withstands high temperatures up to 1200\textdegree{}C, thereby opening new avenues for JJ material exploration and interface optimization. To validate the concept, we performed shadow evaporation of Al-based transmon qubits followed by stencil mask lift-off using vapor hydrofluoric acid, which selectively etches SiO2. We demonstrate average $T_1 \approx 75 \pm 11~\SI{}{\micro\second}$ over a 200 MHz frequency range in multiple cool-downs for one device, and $T_1 \approx 44\pm 8~\SI{}{\micro\second}$ for a second device. These results confirm the compatibility of stencil lithography with state-of-the-art superconducting quantum devices and motivate further investigations into materials engineering, film deposition and surface cleaning techniques.
Efforts to scale up superconducting processors that employ flux-qubits face numerous challenges, among which is the crosstalk created by neighboring flux lines, which are necessaryto bias the qubits at the zero-field and Φ0/2 sweet spots. A solution to this problem is to use symmetric gradiometric loops, which incorporate a flux locking mechanism that, once a fluxon is trapped during cooldown, holds the device at the sweet spot and limits the need for active biasing. We demonstrate this technique by simultaneously locking multiple gradiometric fluxonium qubits in which an aluminum loop retains the trapped fluxon indefinitely. By compensating the inductive asymmetry between the two loops of the design, we are able to lock the effective flux-bias within Φeff=−3×10−4Φ0 from the target, corresponding to only 15 % degradation in T2,E when operated in zero external field. The design strategy demonstrated here reduces integration complexity for flux qubits by minimizing cross-talk and potentially eliminating the need for local flux bias.
A key challenge in achieving scalable fault tolerance in superconducting quantum processors is readout fidelity, which lags behind one- and two-qubit gate fidelity. A major limitationin improving qubit readout is measurement-induced transitions, also referred to as qubit ionization, caused by multiphoton qubit-resonator excitation occurring at specific photon numbers. Since ionization can involve highly excited states, it has been predicted that in transmons — the most widely used superconducting qubit — the photon number at which measurement-induced transitions occur is gate charge dependent. This dependence is expected to persist deep in the transmon regime where the qubit frequency is gate charge insensitive. We experimentally confirm this prediction by characterizing measurement-induced transitions with increasing resonator photon population while actively stabilizing the transmon’s gate charge. Furthermore, because highly excited states are involved, achieving quantitative agreement between theory and experiment requires accounting for higher-order harmonics in the transmon Hamiltonian.
We demonstrate a qubit-readout architecture where the dispersive coupling is entirely mediated by a kinetic inductance. This allows us to engineer the dispersive shift of the readoutresonator independent of the qubit and resonator capacitances. We validate the pure kinetic coupling concept and demonstrate various generalized flux qubit regimes from plasmon to fluxon, with dispersive shifts ranging from 60 kHz to 2 MHz at the half-flux quantum sweet spot. We achieve readout performances comparable to conventional architectures with quantum state preparation fidelities of 99.7 % and 92.7 % for the ground and excited states, respectively, and below 0.1 % leakage to non-computational states.
We demonstrate a new approach to dissipation engineering in microwave quantum optics. For a single mode, dissipation usually corresponds to quantum jumps, where photons are lost oneby one. Here, we are able to tune the minimal number of lost photons per jump to be two (or more) with a simple dc voltage. As a consequence, different quantum states experience different dissipation. Causality implies that the states must also experience different energy shifts. Our measurements of these Lamb shifts are in good agreement with the predictions of the Kramers-Kronig relations for single quantum states in a regime of highly non-linear bath coupling. This work opens new possibilities for quantum state manipulation in circuit QED, without relying on the Josephson effect.