but because these inferences are drawn from fully fabricated devices with many loss channels, they do not definitively implicate or exonerate the dielectric. To resolve this ambiguity, we have devised a measurement method capable of separating and resolving bulk dielectric loss with a sensitivity at the level of 5 parts-per-billion. The method, which we call the dielectric dipper, involves the in-situ insertion of a dielectric sample into a high-quality microwave cavity mode. Smoothly varying the sample’s participation in the cavity mode enables a differential measurement of the sample’s dielectric loss tangent. The dielectric dipper can probe the low-power behavior of dielectrics at cryogenic temperatures, and does so without the need for any lithographic process, enabling controlled comparisons of substrate materials and processing techniques. We demonstrate the method with measurements of EFG sapphire, from which we infer a bulk loss tangent of 62(7)×10−9 and a substrate-air interface loss tangent of 12(2)×10−4. For a typical transmon, this bulk loss tangent would limit device quality factors to less than 20 million, suggesting that bulk loss is likely the dominant loss mechanism in the longest-lived transmons on sapphire. We also demonstrate this method on HEMEX sapphire and bound its bulk loss tangent to be less than 15(5)×10−9. As this bound is about four times smaller than the bulk loss tangent of EFG sapphire, use of HEMEX sapphire as a substrate would lift the bulk dielectric coherence limit of a typical transmon qubit to several milliseconds.