particularly when removing the native oxide, can degrade performance by increasing microwave loss. In this work, we demonstrate that hydrogen can enter α-Ta thin films when exposed to 10 vol% hydrofluoric acid for 3 minutes or longer, leading to an increase in power-independent ohmic loss in high-Q resonators at millikelvin temperatures. Reduced resonator performance is likely caused by the formation of non-superconducting tantalum hydride (TaHx) precipitates. We further show that annealing at 500°C in ultra-high vacuum (10−8 Torr) for one hour fully removes hydrogen and restores the resonators‘ intrinsic quality factors to ~4 million at the single-photon level. These findings identify a previously unreported loss mechanism in α-Ta and offer a pathway to reverse hydrogen-induced degradation in quantum devices based on Ta and, by extension also Nb, enabling more robust fabrication processes for superconducting qubits.