J. V. Cady

Circuit Quantum Electrodynamics Architecture for Gate-Defined Quantum Dots in Silicon

  1. X. Mi,
  2. J. V. Cady,
  3. D. M. Zajac,
  4. J. Stehlik,
  5. L. F. Edge,
  6. and J. R. Petta
We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave
cavity. A quality factor Q = 5,400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon.
arxiv pdf