In quantum information processing, a tension between two different tasks occurs: while qubits‘ states can be preserved by isolating them, quantum gates can be realized only throughqubit-qubit interactions. In arrays of qubits, weak coupling leads to states being spatially localized and strong coupling to delocalized states. Here, we study the average energy level spacing and the relative entropy of the distribution of the level spacings (Kullback-Leibler divergence from Poisson and Gaussian Orthogonal Ensemble) to analyze the crossover between localized and delocalized (chaotic) regimes in linear arrays of superconducting qubits. We consider both transmons as well as capacitively shunted flux qubits, which enables us to tune the qubit anharmonicity. Arrays with uniform anharmonicity, comprising only transmons or flux qubits, display remarkably similar dependencies of level statistics on the coupling strength. In systems with alternating anharmonicity, the localized regime is found to be more resilient to the increase in qubit-qubit coupling strength in comparison to arrays with a single qubit type. This result supports designing devices that incorporate different qubit types to achieve higher performances.
Superconducting circuits constitute a promising platform for future implementation of quantum processors and simulators. Arrays of capacitively coupled transmon qubits naturally implementthe Bose-Hubbard model with attractive on-site interaction. The spectrum of such many-body systems is characterised by low-energy localised states defining the lattice analog of bright solitons. Here, we demonstrate that these bright solitons can be pinned in the system, and we find that a soliton moves while maintaining its shape. Its velocity obeys a scaling law in terms of the combined interaction and number of constituent bosons. In contrast, the source-to-drain transport of photons through the array occurs through extended states that have higher energy compared to the bright soliton. For weak coupling between the source/drain and the array, the populations of the source and drain oscillate in time, with the chain remaining nearly unpopulated at all times. Such a phenomenon is found to be parity dependent. Implications of our results for the actual experimental realisations are discussed.
Designing the spatial profile of the superconducting gap – gap engineering – has long been recognized as an effective way of controlling quasiparticles in superconductingdevices. In aluminum films, their thickness modulates the gap; therefore, standard fabrication of Al/AlOx/Al Josephson junctions, which relies on overlapping a thicker film on top of a thinner one, always results in gap-engineered devices. Here we reconsider quasiparticle effects in superconducting qubits to explicitly account for the unavoidable asymmetry in the gap on the two sides of a Josephson junction. We find that different regimes can be encountered in which the quasiparticles have either similar densities in the two junction leads, or are largely confined to the lower-gap lead. Qualitatively, for similar densities the qubit’s excited state population is lower but its relaxation rate higher than when the quasiparticles are confined; therefore, there is a potential trade-off between two desirable properties in a qubit.
Heat management and refrigeration are key concepts for nanoscale devices operating at cryogenic temperatures. The design of an on-chip mesoscopic refrigerator that works thanks to theinput heat is presented, thus realizing a solid state implementation of the concept of cooling by heating. The system consists of a circuit featuring a thermoelectric element based on a ferromagnetic insulator-superconductor tunnel junction (N-FI-S) and a series of two normal metal-superconductor tunnel junctions (SINIS). The N-FI-S element converts the incoming heat in a thermovoltage, which is applied to the SINIS, thereby yielding cooling. The cooler’s performance is investigated as a function of the input heat current for different bath temperatures. We show that this system can efficiently employ the performance of SINIS refrigeration, with a substantial cooling of the normal metal island. Its scalability and simplicity in the design makes it a promising building block for low-temperature on-chip energy management applications.