Performance Stabilization of High-Coherence Superconducting Qubits

  1. Andrew Dane,
  2. Karthik Balakrishnan,
  3. Brent Wacaser,
  4. Li-Wen Hung,
  5. H. J. Mamin,
  6. Daniel Rugar,
  7. Robert M. Shelby,
  8. Conal Murray,
  9. Kenneth Rodbell,
  10. and Jeffrey Sleight
Superconducting qubits have been used in the most advanced demonstrations of quantum information processing, and they can be manufactured at-scale using proven semiconductor techniques.
This makes them one of the leading technologies in the race to demonstrate useful quantum computers. Since their initial demonstration, advances in design, fabrication, and materials have extended the timescales over which fragile quantum information can be stored and manipulated on superconducting qubits. Ubiquitous atomic-scale material defects have been identified as a primary cause of qubit energy-loss and decoherence. Here we study transmon qubits that exhibit energy relaxation times exceeding 2.5 ms. Even at these long timescales, our qubit energy loss is dominated by two level systems (TLS). We observe large variations in these energy-loss times that would make it extremely difficult to accurately evaluate and compare qubit fabrication processes and to perform studies that require precise measurements of energy loss. To address this issue, we present a technique for characterizing qubit quality factor. In this method, we apply a slowly varying electric field to TLS near the qubit to stabilize the measured energy relaxation time, enabling us to replace hundreds of hours of measurements with ones that span several minutes.

Investigating microwave loss of SiGe using superconducting transmon qubits

  1. Martin Sandberg,
  2. Vivekananda P. Adiga,
  3. Markus Brink,
  4. Cihan Kurter,
  5. Conal Murray,
  6. Marinus Hopstaken,
  7. John Bruley,
  8. Jason Orcutt,
  9. and Hanhee Paik
Silicon-Germanium (SiGe) is a material that possesses a multitude of applications ranging from transistors to eletro-optical modulators and quantum dots. The diverse properties of SiGe
also make it attractive to implementations involving superconducting quantum computing. Here we demonstrate the fabrication of transmon quantum bits on SiGe layers and investigate the microwave loss properties of SiGe at cryogenic temperatures and single photon microwave powers. We find relaxation times of up to 100 μs, corresponding to a quality factor Q above 4 M for large pad transmons. The high Q values obtained indicate that the SiGe/Si heterostructure is compatible with state of the art performance of superconducting quantum circuits.