Identifying impurities in a silicon substrate by using a superconducting flux qubit

  1. Hiraku Toida,
  2. Kosuke Kakuyanagi,
  3. Leonid V. Abdurakhimov,
  4. Masahiro Hori,
  5. Yukinori Ono,
  6. and Shiro Saito
A bismuth-doped silicon substrate was analyzed by using a magnetometer based on a superconducting flux qubit. The temperature dependence of the magnetization indicates that the silicon substrate contains at least two signal sources, intentionally doped bismuth spins and a spin 1/2 system with a ratio of 0.873 to 0.127. In combination with a conventional electron spin resonance spectrometer, a candidate origin of the spin 1/2 system was identified as a dangling bond on the silicon surface. In addition, the spin sensitivity of the magnetometer was also estimated to be 12 spins/Hz‾‾‾√ by using optimized dispersive readout.
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