Gatemon qubit based on a thin InAs-Al hybrid nanowire

  1. Jierong Huo,
  2. Zezhou Xia,
  3. Zonglin Li,
  4. Shan Zhang,
  5. Yuqing Wang,
  6. Dong Pan,
  7. Qichun Liu,
  8. Yulong Liu,
  9. Zhichuan Wang,
  10. Yichun Gao,
  11. Jianhua Zhao,
  12. Tiefu Li,
  13. Jianghua Ying,
  14. Runan Shang,
  15. and Hao Zhang
We study a gate-tunable superconducting qubit (gatemon) based on a thin InAs-Al hybrid nanowire. Using a gate voltage to control its Josephson energy, the gatemon can reach the strong coupling regime to a microwave cavity. In the dispersive regime, we extract the energy relaxation time T1∼0.56 μs and the dephasing time T∗2∼0.38 μs. Since thin InAs-Al nanowires can have fewer or single sub-band occupation and recent transport experiment shows the existence of nearly quantized zero-bias conductance peaks, our result holds relevancy for detecting Majorana zero modes in thin InAs-Al nanowires using circuit quantum electrodynamics.
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