Epitaxial α-Ta (110) film on a-plane sapphire substrate for superconducting qubits with long coherence times

Realization of practical superconducting quantum computing requires large-scale integration of qubits with long coherence times. It has been reported that {\alpha}-Ta (110) film can greatly improve the coherence times of qubits. Compared to the commonly used {\alpha}-Ta (110) film deposited on c-plane sapphire, {\alpha}-Ta (110) film can be epitaxially grown on a-plane sapphire because of the atomic relationships at their interface. Here, we demonstrate the growth of a large-scale well-ordered quasi-single crystal {\alpha}-Ta (110) film with a low density of defects on a-plane sapphire. The root mean square of the film with thickness of 200 nm is below 0.7 nm over a 10 {\mu}m \times 10 {\mu}m area and the residual resistance ratio is as high as 15.5. Transmon qubits are also fabricated using this kind of film and show relaxation times exceeding 150 {\mu}s. These results suggest {\alpha}-Ta (110) film grown on a-plane sapphire is an alternative promising choice for large-scale superconducting circuits with long coherence times of qubits.