Calibration of the cross-resonance two-qubit gate between directly-coupled transmons

  1. A. D. Patterson,
  2. J. Rahamim,
  3. T. Tsunoda,
  4. P. Spring,
  5. S. Jebari,
  6. K. Ratter,
  7. M. Mergenthaler,
  8. G. Tancredi,
  9. B. Vlastakis,
  10. M. Esposito,
  11. and P. J. Leek
Quantum computation requires the precise control of the evolution of a quantum system, typically through application of discrete quantum logic gates on a set of qubits. Here, we use
the cross-resonance interaction to implement a gate between two superconducting transmon qubits with a direct static dispersive coupling. We demonstrate a practical calibration procedure for the optimization of the gate, combining continuous and repeated-gate Hamiltonian tomography with step-wise reduction of dominant two-qubit coherent errors through mapping to microwave control parameters. We show experimentally that this procedure can enable a ZX^−π/2 gate with a fidelity F=97.0(7)%, measured with interleaved randomized benchmarking. We show this in a architecture with out-of-plane control and readout that is readily extensible to larger scale quantum circuits.

A self-aligned nano-fabrication process for vertical NbN-MgO-NbN Josephson junctions

  1. A. Grimm,
  2. S. Jebari,
  3. D. Hazra,
  4. F. Blanchet,
  5. F. Gustavo,
  6. J.-L. Thomassin,
  7. and M. Hofheinz
We present a new process for fabricating vertical NbN-MgO-NbN Josephson junctions using self-aligned silicon nitride spacers. It allows for a wide range of junction areas from 0.02
um^2 to several 100 um^2. At the same time, it is suited for the implementation of complex microwave circuits with transmission line impedances ranging from < 1 Ohm to > 1 kOhm. The constituent thin films and the finished junctions are characterized. The latter are shown to have high gap voltages (> 4 mV) and low sub-gap leakage currents.

Quantum limited amplification from inelastic Cooper pair tunneling

  1. S. Jebari,
  2. F. Blanchet,
  3. A. Grimm,
  4. D. Hazra,
  5. R. Albert,
  6. P. Joyez,
  7. D. Vion,
  8. D. Esteve,
  9. F. Portier,
  10. and M. Hofheinz
Nature sets fundamental limits regarding how accurate the amplification of analog signals may be. For instance, a linear amplifier unavoidably adds some noise which amounts to half
a photon at best. While for most applications much higher noise levels are acceptable, the readout of microwave quantum systems, such as spin or superconducting qubits requires noise as close as possible to this ultimate limit. To date it is approached only by parametric amplifiers exploiting non-linearities in superconducting circuits and driven by a strong microwave pump tone. However, this microwave drive makes them much more difficult to implement and operate than conventional DC powered amplifiers, which, so far suffer from much higher noise. Here we present the first experimental proof that a simple DC-powered setup allows for amplification close to the quantum limit. Our amplification scheme is based on the stimulated microwave photon emission accompanying inelastic Cooper pair tunneling through a DC-biased Josephson junction, with the key to low noise lying in the separation of nonlinear and dissipative elements, in analogy to parametric amplifiers.

Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition

  1. D. Hazra,
  2. N. Tsavdaris,
  3. S. Jebari,
  4. A. Grimm,
  5. F. Blanchet,
  6. F. Mercier,
  7. E. Blanquet,
  8. C. Chapelier,
  9. and M. Hofheinz
Niobium nitride (NbN) is widely used in high-frequency superconducting electronics circuits because it has one of the highest superconducting transition temperatures (Tc ∼ 16.5 K)
and largest gap among conventional superconductors. In its thin-film form, the Tc of NbN is very sensitive to growth conditions and it still remains a challenge to grow NbN thin film (below 50 nm) with high Tc. Here, we report on the superconducting properties of NbN thin films grown by high-temperature chemical vapor deposition (HTCVD). Transport measurements reveal significantly lower disorder than previously reported, characterized by a Ioffe-Regel (kFℓ) parameter of ∼ 14. Accordingly we observe Tc ∼ 17.06 K (point of 50% of normal state resistance), the highest value reported so far for films of thickness below 50 nm, indicating that HTCVD could be particularly useful for growing high quality NbN thin films.