Rabi oscillations in a superconducting nanowire circuit

  1. Yannick Schön,
  2. Jan Nicolas Voss,
  3. Micha Wildermuth,
  4. Andre Schneider,
  5. Sebastian T. Skacel,
  6. Martin P. Weides,
  7. Jared H. Cole,
  8. Hannes Rotzinger,
  9. and Alexey V. Ustinov
We investigate the circuit quantum electrodynamics of superconducting nanowire oscillators. The sample circuit consists of a capacitively shunted nanowire with a width of about 20 nm
and a varying length up to 350 nm, capacitively coupled to an on-chip resonator. By applying microwave pulses we observe Rabi oscillations, measure coherence times and the anharmonicity of the circuit. Despite the very compact design, simple top-down fabrication and high degree of disorder in the oxidized (granular) aluminum material used, we observe lifetimes in the microsecond range.

Identifying capacitive and inductive loss in lumped element superconducting hybrid titanium nitride/aluminum resonators

  1. Michael R. Vissers,
  2. Martin P. Weides,
  3. Jeffrey S. Kline,
  4. Martin O. Sandberg,
  5. and David P. Pappas
We present a method to systematically locate and extract capacitive and inductive losses in superconducting resonators at microwave frequencies by use of mixed-material, lumped element
devices. In these devices, ultra-low loss titanium nitride was progressively replaced with aluminum in the inter-digitated capacitor and meandered inductor elements. By measuring the power dependent loss at 50 mK as the Al-TiN fraction in each element is increased, we find that at low electric field, i.e. in the single photon limit, the loss is two level system in nature and is correlated with the amount of Al capacitance rather than the Al inductance. In the high electric field limit, the remaining loss is linearly related to the product of the Al area times its inductance and is likely due to quasiparticles generated by stray radiation. At elevated temperature, additional loss is correlated with the amount of Al in the inductance, with a power independent TiN-Al interface loss term that exponentially decreases as the temperature is reduced. The TiN-Al interface loss is vanishingly small at the 50 mK base temperature.