We use a floating tunable coupler to mediate interactions between qubits on separate chips to build a modular architecture. We demonstrate three different designs of multi-chip tunablecouplers using vacuum gap capacitors or superconducting indium bump bonds to connect the coupler to a microwave line on a common substrate and then connect to the qubit on the next chip. We show that the zero-coupling condition between qubits on separate chips can be achieved in each design and that the relaxation rates for the coupler and qubits are not noticeably affected by the extra circuit elements. Finally, we demonstrate two-qubit gate operations with fidelity at the same level as qubits with a tunable coupler on a single chip. Using one or more indium bonds does not degrade qubit coherence or impact the performance of two-qubit gates.
We present a novel transmon qubit fabrication technique that yields systematic improvements in T1 coherence times. We fabricate devices using an encapsulation strategy that involvespassivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different capping materials and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T1 coherence times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 200 microseconds. Our comparative structural and chemical analysis suggests that amorphous niobium suboxides may induce higher losses. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.
Enabling applications for solid state quantum technology will require systematically reducing noise, particularly dissipation, in these systems. Yet, when multiple decay channels arepresent in a system with similar weight, resolution to distinguish relatively small changes is necessary to infer improvements to noise levels. For superconducting qubits, uncontrolled variation of nominal performance makes obtaining such resolution challenging. Here, we approach this problem by investigating specific combinations of previously reported fabrication techniques on the quality of 242 thin film superconducting resonators and qubits. Our results quantify the influence of elementary processes on dissipation at key interfaces. We report that an end-to-end optimization of the manufacturing process that integrates multiple small improvements together can produce an average T¯¯¯¯1=76±13 μs across 24 qubits with the best qubits having T1≥110 μs. Moreover, our analysis places bounds on energy decay rates for three fabrication-related loss channels present in state-of-the-art superconducting qubits. Understanding dissipation through such systematic analysis may pave the way for lower noise solid state quantum computers.