A structured electromagnetic reservoir can result in novel dynamics of quantum emitters. In particular, the reservoir can be tailored to have a memory of past interactions with emitters,in contrast to memory-less Markovian dynamics of typical open systems. In this Article, we investigate the non-Markovian dynamics of a superconducting qubit strongly coupled to a superconducting slow-light waveguide reservoir. Tuning the qubit into the spectral vicinity of the passband of this waveguide, we find non-exponential energy relaxation as well as substantial changes to the qubit emission rate. Further, upon addition of a reflective boundary to one end of the waveguide, we observe revivals in the qubit population on a timescale 30 times longer than the inverse of the qubit’s emission rate, corresponding to the round-trip travel time of an emitted photon. By tuning of the qubit-waveguide interaction strength, we probe a crossover between Markovian and non-Markovian qubit emission dynamics. These attributes allow for future studies of multi-qubit circuits coupled to structured reservoirs, in addition to constituting the necessary resources for generation of multiphoton highly entangled states.
The embedding of tunable quantum emitters in a photonic bandgap structure enables the control of dissipative and dispersive interactions between emitters and their photonic bath. Operationin the transmission band, outside the gap, allows for studying waveguide quantum electrodynamics in the slow-light regime. Alternatively, tuning the emitter into the bandgap results in finite range emitter-emitter interactions via bound photonic states. Here we couple a transmon qubit to a superconducting metamaterial with a deep sub-wavelength lattice constant (λ/60). The metamaterial is formed by periodically loading a transmission line with compact, low loss, low disorder lumped element microwave resonators. We probe the coherent and dissipative dynamics of the system by measuring the Lamb shift and the change in the lifetime of the transmon qubit. Tuning the qubit frequency in the vicinity of a band-edge with a group index of ng=450, we observe an anomalous Lamb shift of 10 MHz accompanied by a 24-fold enhancement in the qubit lifetime. In addition, we demonstrate selective enhancement and inhibition of spontaneous emission of different transmon transitions, which provide simultaneous access to long-lived metastable qubit states and states strongly coupled to propagating waveguide modes.
We present the fabrication and characterization of transmon qubits formed from aluminum Josephson junctions on two different silicon-based substrates: (i) high-resistivity silicon (Si)and (ii) silicon-on-insulator (SOI). Key to the qubit fabrication process is the use of an anhydrous hydrofluoric vapor process which removes silicon surface oxides without attacking aluminum, and in the case of SOI substrates, selectively removes the lossy buried oxide underneath the qubit region. For qubits with a transition frequency of approximately 5GHz we find qubit lifetimes and coherence times comparable to those attainable on sapphire substrates (T1,Si=27μs, T2,Si=6.6μs; T1,SOI=3.5μs, T2,SOI=2.2μs). This qubit fabrication process in principle permits co-fabrication of silicon photonic and mechanical elements, providing a route towards chip-scale integration of electro-opto-mechanical transducers for quantum networking of superconducting microwave quantum circuits.